Inventor
TORNG CHYU-JIUH
US115 patents
⚠️ This page may combine multiple inventors who share the name “TORNG CHYU-JIUH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEADWAY TECHNOLOGIES INC
23 patentsUS6466418B1Oct 15, 2002
Bottom spin valves with continuous spacer exchange (or hard) bias
HEADWAY TECHNOLOGIES INC114 citations98
US6322640B1Nov 27, 2001
Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element
HEADWAY TECHNOLOGIES INC59 citations96
US6103136AAug 15, 2000
Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)
HEADWAY TECHNOLOGIES INC62 citations96
US8772051B1Jul 8, 2014
Fabrication method for embedded magnetic memory
HEADWAY TECHNOLOGIES INC41 citations94
US7446987B2Nov 4, 2008
Composite hard bias design with a soft magnetic underlayer for sensor applications
HEADWAY TECHNOLOGIES INC31 citations93
US7283337B2Oct 16, 2007
Abutted exchange bias design for sensor stabilization
HEADWAY TECHNOLOGIES INC44 citations93
US7016165B2Mar 21, 2006
Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication
HEADWAY TECHNOLOGIES INC24 citations93
US6785954B2Sep 7, 2004
Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor
HEADWAY TECHNOLOGIES INC23 citations93
US6668443B2Dec 30, 2003
Process for manufacturing a spin valve recording head
HEADWAY TECHNOLOGIES INC19 citations93
US6632474B1Oct 14, 2003
Robust hard bias/conductor lead structures for future GMR heads
HEADWAY TECHNOLOGIES INC23 citations93
US6291087B1Sep 18, 2001
Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias
HEADWAY TECHNOLOGIES INC21 citations93
US7583481B2Sep 1, 2009
FCC-like trilayer AP2 structure for CPP GMR EM improvement
HEADWAY TECHNOLOGIES INC22 citations92
US6129957AOct 10, 2000
Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications
HEADWAY TECHNOLOGIES INC37 citations91
US8933542B2Jan 13, 2015
Method to reduce magnetic film stress for better yield
HEADWAY TECHNOLOGIES INC12 citations84
US7688555B2Mar 30, 2010
Hard bias design for extra high density recording
HEADWAY TECHNOLOGIES INC11 citations84
US7602590B2Oct 13, 2009
Tunneling magneto-resistive spin valve sensor with novel composite free layer
HEADWAY TECHNOLOGIES INC10 citations84
US7564658B2Jul 21, 2009
CoFe insertion for exchange bias and sensor improvement
HEADWAY TECHNOLOGIES INC16 citations84
US7515388B2Apr 7, 2009
Composite hard bias design with a soft magnetic underlayer for sensor applications
HEADWAY TECHNOLOGIES INC17 citations84
US7390530B2Jun 24, 2008
Structure and process for composite free layer in CPP GMR device
HEADWAY TECHNOLOGIES INC15 citations84
US7352543B2Apr 1, 2008
Ta based bilayer seed for IrMn CPP spin valve
HEADWAY TECHNOLOGIES INC10 citations84
US7275304B2Oct 2, 2007
Method of forming a hard bias structure in a magnetic head
HEADWAY TECHNOLOGIES INC12 citations84
US6870711B1Mar 22, 2005
Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices
HEADWAY TECHNOLOGIES INC17 citations84
US6842969B2Jan 18, 2005
Process for manufacturing a magnetic read head
HEADWAY TECHNOLOGIES INC12 citations84
MAGIC TECHNOLOGIES INC
10 patentsUS7750421B2Jul 6, 2010
High performance MTJ element for STT-RAM and method for making the same
MAGIC TECHNOLOGIES INC100 citations99
US8749003B2Jun 10, 2014
High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
MAGIC TECHNOLOGIES INC51 citations98
US7936027B2May 3, 2011
Method of MRAM fabrication with zero electrical shorting
MAGIC TECHNOLOGIES INC79 citations98
US7696551B2Apr 13, 2010
Composite hard mask for the etching of nanometer size magnetic multilayer based device
MAGIC TECHNOLOGIES INC74 citations98
US7863060B2Jan 4, 2011
Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices
MAGIC TECHNOLOGIES INC85 citations96
US8372661B2Feb 12, 2013
High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
MAGIC TECHNOLOGIES INC18 citations93
US7672093B2Mar 2, 2010
Hafnium doped cap and free layer for MRAM device
MAGIC TECHNOLOGIES INC27 citations93
US7122386B1Oct 17, 2006
Method of fabricating contact pad for magnetic random access memory
MAGIC TECHNOLOGIES INC40 citations93
US7884433B2Feb 8, 2011
High density spin-transfer torque MRAM process
MAGIC TECHNOLOGIES INC25 citations92
US7663131B2Feb 16, 2010
SyAF structure to fabricate Mbit MTJ MRAM
MAGIC TECHNOLOGIES INC23 citations92
ZHONG TOM
4 patentsUS8133745B2Mar 13, 2012
Method of magnetic tunneling layer processes for spin-transfer torque MRAM
ZHONG TOM23 citations92
US8324698B2Dec 4, 2012
High density spin-transfer torque MRAM process
ZHONG TOM30 citations91
US8183061B2May 22, 2012
High density spin-transfer torque MRAM process
ZHONG TOM21 citations91
US8803293B2Aug 12, 2014
Method to reduce magnetic film stress for better yield
ZHONG TOM12 citations83
HORNG CHENG T
3 patentsUS8138561B2Mar 20, 2012
Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
HORNG CHENG T58 citations98
US8080432B2Dec 20, 2011
High performance MTJ element for STT-RAM and method for making the same
HORNG CHENG T48 citations98
US8436437B2May 7, 2013
High performance MTJ elements for STT-RAM and method for making the same
HORNG CHENG T10 citations84
CAO WEI
2 patentsHEADWAY TECH INC
2 patentsREAD RITE CORP
1 patentGYRFALCON TECH INC
1 patentBELEN RODOLFO
1 patentWANG PO-KANG
1 patentAPPLIED MAGNETICS CORP
1 patentZHONG ADAM
1 patentShowing the top 50 of 115 patents by PatentIndex Score.