P

Inventor

TORNG CHYU-JIUH

US115 patents
⚠️ This page may combine multiple inventors who share the name “TORNG CHYU-JIUH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEADWAY TECHNOLOGIES INC

23 patents
US6466418B1Oct 15, 2002

Bottom spin valves with continuous spacer exchange (or hard) bias

HEADWAY TECHNOLOGIES INC114 citations98
US6322640B1Nov 27, 2001

Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element

HEADWAY TECHNOLOGIES INC59 citations96
US6103136AAug 15, 2000

Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)

HEADWAY TECHNOLOGIES INC62 citations96
US8772051B1Jul 8, 2014

Fabrication method for embedded magnetic memory

HEADWAY TECHNOLOGIES INC41 citations94
US7446987B2Nov 4, 2008

Composite hard bias design with a soft magnetic underlayer for sensor applications

HEADWAY TECHNOLOGIES INC31 citations93
US7283337B2Oct 16, 2007

Abutted exchange bias design for sensor stabilization

HEADWAY TECHNOLOGIES INC44 citations93
US7016165B2Mar 21, 2006

Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication

HEADWAY TECHNOLOGIES INC24 citations93
US6785954B2Sep 7, 2004

Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor

HEADWAY TECHNOLOGIES INC23 citations93
US6668443B2Dec 30, 2003

Process for manufacturing a spin valve recording head

HEADWAY TECHNOLOGIES INC19 citations93
US6632474B1Oct 14, 2003

Robust hard bias/conductor lead structures for future GMR heads

HEADWAY TECHNOLOGIES INC23 citations93
US6291087B1Sep 18, 2001

Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias

HEADWAY TECHNOLOGIES INC21 citations93
US7583481B2Sep 1, 2009

FCC-like trilayer AP2 structure for CPP GMR EM improvement

HEADWAY TECHNOLOGIES INC22 citations92
US6129957AOct 10, 2000

Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications

HEADWAY TECHNOLOGIES INC37 citations91
US8933542B2Jan 13, 2015

Method to reduce magnetic film stress for better yield

HEADWAY TECHNOLOGIES INC12 citations84
US7688555B2Mar 30, 2010

Hard bias design for extra high density recording

HEADWAY TECHNOLOGIES INC11 citations84
US7602590B2Oct 13, 2009

Tunneling magneto-resistive spin valve sensor with novel composite free layer

HEADWAY TECHNOLOGIES INC10 citations84
US7564658B2Jul 21, 2009

CoFe insertion for exchange bias and sensor improvement

HEADWAY TECHNOLOGIES INC16 citations84
US7515388B2Apr 7, 2009

Composite hard bias design with a soft magnetic underlayer for sensor applications

HEADWAY TECHNOLOGIES INC17 citations84
US7390530B2Jun 24, 2008

Structure and process for composite free layer in CPP GMR device

HEADWAY TECHNOLOGIES INC15 citations84
US7352543B2Apr 1, 2008

Ta based bilayer seed for IrMn CPP spin valve

HEADWAY TECHNOLOGIES INC10 citations84
US7275304B2Oct 2, 2007

Method of forming a hard bias structure in a magnetic head

HEADWAY TECHNOLOGIES INC12 citations84
US6870711B1Mar 22, 2005

Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices

HEADWAY TECHNOLOGIES INC17 citations84
US6842969B2Jan 18, 2005

Process for manufacturing a magnetic read head

HEADWAY TECHNOLOGIES INC12 citations84

MAGIC TECHNOLOGIES INC

10 patents

ZHONG TOM

4 patents

HORNG CHENG T

3 patents

CAO WEI

2 patents

HEADWAY TECH INC

2 patents

READ RITE CORP

1 patent

GYRFALCON TECH INC

1 patent

BELEN RODOLFO

1 patent

WANG PO-KANG

1 patent

APPLIED MAGNETICS CORP

1 patent

ZHONG ADAM

1 patent

Showing the top 50 of 115 patents by PatentIndex Score.