Inventor
SEO DAVID
KR36 patents
⚠️ This page may combine multiple inventors who share the name “SEO DAVID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS7602042B2Oct 13, 2009
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
SAMSUNG ELECTRONICS CO LTD26 citations92
US7521704B2Apr 21, 2009
Memory device using multi-layer with a graded resistance change
SAMSUNG ELECTRONICS CO LTD20 citations92
US9306005B2Apr 5, 2016
Electronic device including graphene
SAMSUNG ELECTRONICS CO LTD10 citations84
US9105556B2Aug 11, 2015
Tunneling field-effect transistor including graphene channel
SAMSUNG ELECTRONICS CO LTD11 citations84
US9053932B2Jun 9, 2015
Methods of preparing graphene and device including graphene
SAMSUNG ELECTRONICS CO LTD10 citations84
US9040957B2May 26, 2015
Field effect transistor using graphene
SAMSUNG ELECTRONICS CO LTD8 citations84
US7935953B2May 3, 2011
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7400027B2Jul 15, 2008
Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US9768062B1Sep 19, 2017
Method for forming low parasitic capacitance source and drain contacts
SAMSUNG ELECTRONICS CO LTD8 citations80
US8742400B2Jun 3, 2014
Graphene switching device including tunable barrier
SAMSUNG ELECTRONICS CO LTD5 citations73
US9166062B2Oct 20, 2015
Field effect transistor using graphene
SAMSUNG ELECTRONICS CO LTD2 citations63
US9048310B2Jun 2, 2015
Graphene switching device having tunable barrier
SAMSUNG ELECTRONICS CO LTD2 citations63
US7821809B2Oct 26, 2010
Nonvolatile memory device and method including resistor and transistor
SAMSUNG ELECTRONICS CO LTD6 citations63
US9306021B2Apr 5, 2016
Graphene devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9054708B2Jun 9, 2015
Touch sensor and touch panel including the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US10141407B2Nov 27, 2018
Graphene device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9595610B2Mar 14, 2017
Field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9525076B2Dec 20, 2016
Memory device using graphene as charge-trap layer and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9379319B2Jun 28, 2016
Nonvolatile memory transistor and device including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9373685B2Jun 21, 2016
Graphene device and electronic apparatus
SAMSUNG ELECTRONICS CO LTD0 citations52
US9281404B2Mar 8, 2016
Three-dimensional graphene switching device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9929239B2Mar 27, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9099304B2Aug 4, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9299789B2Mar 29, 2016
Memory devices including graphene switching devices
SAMSUNG ELECTRONICS CO LTD0 citations42
SEO DAVID
3 patentsUS8084371B2Dec 27, 2011
Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor
SEO DAVID5 citations72
US8310014B2Nov 13, 2012
Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor
SEO DAVID3 citations61
US9184236B2Nov 10, 2015
Method of transferring graphene using trench and substrate for receiving graphene
SEO DAVID0 citations50