Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor

Abstract

Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10 −11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

1. A field effect transistor, comprising:
 a channel layer on a substrate; 
 a gate insulating layer on the channel layer, the gate insulating layer including both diamond-like carbon and tetrahedral amorphous carbon; 
 a gate electrode on the gate insulating layer; and 
 a source electrode and a drain electrode respectively on opposing sides of the channel layer so as to contact respective ends of the channel layer, 
 wherein the channel layer is one of a graphene layer and a Group III-V material layer. 
 
     
     
       2. The field effect transistor of  claim 1 , wherein upper surfaces of the source electrode and the drain electrode are on a same plane as an upper surface of the channel layer. 
     
     
       3. The field effect transistor of  claim 1 , wherein the source electrode and the drain electrode contact opposing sidewall of the gate insulating layer.