Inventor · disambiguated record
Daniel T. Pham
Also filed as: PHAM DANIEL · PHAM DANIEL T · PHAM DANIEL T K · PHAM DANIEL THANH KHAE
28 granted patents·4 pending applications·853 citations·filing 1999–2023
97Inventor score
Files withGLOBALFOUNDRIES INC15FREESCALE SEMICONDUCTOR INC5MOTOROLA INC4PHAM DANIEL T3GLOBAL FOUNDRIES INC1
Top patents by PatentIndex Score
32 records- 0199US9064932B1Methods of forming gate structures by a gate-cut-last process and the resulting structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 23, 2015·109 cites·24 claims
- 0298US9064801B1Bi-layer gate cap for self-aligned contact formationIBM·Filed 2014·Granted Jun 23, 2015·49 cites·17 claims
- 0398US8846491B1Forming a diffusion break during a RMG processGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·97 cites·20 claims
- 0498US6838322B2Method for forming a double-gated semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 4, 2005·259 cites·21 claims
- 0596US8728885B1Methods of forming a three-dimensional semiconductor device with a nanowire channel structureGLOBALFOUNDRIES INC·Filed 2012·Granted May 20, 2014·31 cites·24 claims
- 0695US6413819B1Memory device and method for using prefabricated isolated storage elementsMOTOROLA INC·Filed 2000·Granted Jul 2, 2002·128 cites·21 claims
- 0788US8906754B2Methods of forming a semiconductor device with a protected gate cap layer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 9, 2014·8 cites·19 claims
- 0887US8669147B2Methods of forming high mobility fin channels on three dimensional semiconductor devicesPHAM DANIEL T·Filed 2012·Granted Mar 11, 2014·10 cites·23 claims
- 0987US8309410B2Power MOSFET with a gate structure of different materialPHAM DANIEL T·Filed 2011·Granted Nov 13, 2012·9 cites·20 claims
- 1086US9419137B1Stress memorization film and oxide isolation in finsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·7 cites·15 claims
- 1186US9184263B2Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 10, 2015·7 cites·20 claims
- 1286US7943988B2Power MOSFET with a gate structure of different materialFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted May 17, 2011·11 cites·21 claims
- 1385US9219002B2Overlay performance for a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·6 cites·14 claims
- 1485US6509609B1Grooved channel schottky MOSFETMOTOROLA INC·Filed 2001·Granted Jan 21, 2003·39 cites·20 claims
- 1584US8853019B1Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal processGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 7, 2014·7 cites·34 claims
- 1680US8871582B2Methods of forming a semiconductor device with a protected gate cap layer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 28, 2014·5 cites·13 claims
- 1778US8877588B2Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 4, 2014·4 cites·25 claims
- 1871US9263585B2Methods of forming enhanced mobility channel regions on 3D semiconductor devices, and devices comprising sameGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 16, 2016·3 cites·21 claims
- 1971US9263537B2Methods of forming a semiconductor device with a protected gate cap layer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·2 cites·25 claims
- 2071US2024413239A1Ldmos nanosheet transistorTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2169US7645651B2LDMOS with channel stressFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 12, 2010·5 cites·19 claims
- 2266US6261978B1Process for forming semiconductor device with thick and thin filmsMOTOROLA INC·Filed 1999·Granted Jul 17, 2001·34 cites·19 claims
- 2363US6753216B2Multiple gate transistor employing monocrystalline silicon wallsFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 22, 2004·11 cites·19 claims
- 2462US8618616B2FinFET structures and methods for fabricating the samePHAM DANIEL THANH KHAC·Filed 2012·Granted Dec 31, 2013·2 cites·20 claims
- 2554US6949455B2Method for forming a semiconductor device structure a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 27, 2005·6 cites·5 claims
- 2650US9466491B2Methods of forming a semiconductor device with a spacer etch block cap and the resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 11, 2016·0 cites·22 claims
- 2749US8664093B2Methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefromPHAM DANIEL T·Filed 2012·Granted Mar 4, 2014·0 cites·23 claims
- 2848US6689676B1Method for forming a semiconductor device structure in a semiconductor layerMOTOROLA INC·Filed 2002·Granted Feb 10, 2004·4 cites·15 claims
- 2944US9269611B2Integrated circuits having gate cap protection and methods of forming the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·0 cites·17 claims
- 3043US2015050792A1Extra narrow diffusion break for 3d finfet technologiesGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3141US2015001628A1Semiconductor structure with improved isolation and method of fabrication to enable fine pitch transistor arraysGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3235US2002094684A1Foam cleaning process in semiconductor manufacturingFiled 2001·Application pending·0 cites
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