Inventor · disambiguated record
Vimal Kamineni
Also filed as: KAMINENI VIMAL · KAMINENI VIMAL K · KAMINENI VIMAL KUMAR
59 granted patents·16 pending applications·413 citations·filing 2012–2025
98Inventor score
Top patents by PatentIndex Score
75 records- 0199US9111907B2Silicide protection during contact metallization and resulting semiconductor structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 18, 2015·174 cites·14 claims
- 0297US11009387B2Superconducting nanowire single photon detector and method of fabrication thereofPSIQUANTUM CORP·Filed 2020·Granted May 18, 2021·40 cites·10 claims
- 0397US9721889B1Middle of the line (MOL) metal contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·21 cites·20 claims
- 0496US8889500B1Methods of forming stressed fin channel structures for FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 18, 2014·28 cites·22 claims
- 0594US9029920B2Semiconductor devices and methods of fabrication with reduced gate and contact resistancesGLOBALFOUNDRIES INC·Filed 2013·Granted May 12, 2015·15 cites·20 claims
- 0693US10134633B1Self-aligned contact with CMP stop layerGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 20, 2018·8 cites·18 claims
- 0792US11441941B2Superconducting nanowire single photon detector and method of fabrication thereofPSIQUANTUM CORP·Filed 2021·Granted Sep 13, 2022·2 cites·17 claims
- 0892US9905473B1Self-aligned contact etch for fabricating a FinFETGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·7 cites·19 claims
- 0992US9362377B1Low line resistivity and repeatable metal recess using CVD cobalt reflowGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·8 cites·19 claims
- 1092US9318388B2Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 19, 2016·9 cites·18 claims
- 1191US11226507B2Method and system for formation of stabilized tetragonal barium titanatePSIQUANTUM CORP·Filed 2020·Granted Jan 18, 2022·2 cites·19 claims
- 1291US9613817B1Method of enhancing surface doping concentration of source/drain regionsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 4, 2017·8 cites·12 claims
- 1391US9570397B1Local interconnect structure including non-eroded contact via trenchesIBM·Filed 2015·Granted Feb 14, 2017·7 cites·14 claims
- 1491US9356149B2Silicide protection during contact metallization and resulting semiconductor structuresGLOBALFOUNDRIES INC·Filed 2015·Granted May 31, 2016·6 cites·10 claims
- 1591US8722491B2Replacement metal gate semiconductor device formation using low resistivity metalsPARK CHANG SEO·Filed 2012·Granted May 13, 2014·15 cites·18 claims
- 1690US9093302B2Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·10 cites·14 claims
- 1790US9040421B2Methods for fabricating integrated circuits with improved contact structuresGLOBALFOUNDRIES INC·Filed 2013·Granted May 26, 2015·8 cites·20 claims
- 1890US8975142B2FinFET channel stress using tungsten contacts in raised epitaxial source and drainGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 10, 2015·14 cites·16 claims
- 1986US10043708B2Structure and method for capping cobalt contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 7, 2018·4 cites·14 claims
- 2085US12176672B2Isolation of waveguide-integrated detectors using a back end of line processPSIQUANTUM CORP·Filed 2021·Granted Dec 24, 2024·1 cites·20 claims
- 2185US10916470B2Modified dielectric fill between the contacts of field-effect transistorsGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 9, 2021·4 cites·20 claims
- 2285US8890262B2Semiconductor device having a metal gate recessGLOBALFOUNDRIES INC·Filed 2012·Granted Nov 18, 2014·6 cites·3 claims
- 2384US9287213B2Integrated circuits with improved contact structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·3 cites·20 claims
- 2482US12436337B2Low loss optical interposerPSIQUANTUM CORP·Filed 2024·Granted Oct 7, 2025·0 cites·16 claims
- 2582US12321053B2Engineered electro-optic devicesPSIQUANTUM CORP·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2682US10707119B1Interconnect structures with airgaps and dielectric-capped interconnectsGLOBALFOUNDRIES INC·Filed 2019·Granted Jul 7, 2020·3 cites·14 claims
- 2780US12264961B2Superconducting nanowire single photon detector and method of fabrication thereofPSIQUANTUM CORP·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2880US9917009B2Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 13, 2018·3 cites·20 claims
- 2980US2025328037A1Engineered electro-optic devicesPSIQUANTUM CORP·Filed 2025·Application pending·0 cites
- 3080US2025087959A1Isolation of waveguide-integrated detectors using a back end of line processPSIQUANTUM CORP·Filed 2024·Application pending·0 cites
- 3179US11651956B2Germanium mediated de-oxidation of siliconPSIQUANTUM CORP·Filed 2022·Granted May 16, 2023·0 cites·11 claims
- 3279US2025377500A1Photonic integrated circuitPSIQUANTUM CORP·Filed 2025·Application pending·0 cites
- 3375US12366708B2Photonic integrated circuitPSIQUANTUM CORP·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 3475US11892715B2Engineered electro-optic devicesPSIQUANTUM CORP·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 3575US10128151B2Devices and methods of cobalt fill metallizationGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 13, 2018·2 cites·17 claims
- 3672US10770562B1Interlayer dielectric replacement techniques with protection for source/drain contactsIBM·Filed 2019·Granted Sep 8, 2020·1 cites·12 claims
- 3772US10593593B2Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formationGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 17, 2020·1 cites·13 claims
- 3872US2024063146A1Barium titanate films having reduced interfacial strainPSIQUANTUM CORP·Filed 2023·Application pending·0 cites
- 3971US11817400B2Barium titanate films having reduced interfacial strainPSIQUANTUM CORP·Filed 2021·Granted Nov 14, 2023·0 cites·10 claims
- 4071US9466676B2Method for forming a semiconductor device having a metal gate recessGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 11, 2016·2 cites·13 claims
- 4170US11302528B2Germanium mediated de-oxidation of siliconPSIQUANTUM CORP·Filed 2020·Granted Apr 12, 2022·0 cites·10 claims
- 4270US10468300B2Contacting source and drain of a transistor deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 5, 2019·1 cites·8 claims
- 4369US12498402B2Method and structure to incorporate multiple low loss photonic circuit componentsPSIQUANTUM CORP·Filed 2021·Granted Dec 16, 2025·0 cites·19 claims
- 4468US12449620B2Structure and method to remove semiconductor chip material for optical signal access to a photonic chipPSIQUANTUM CORP·Filed 2021·Granted Oct 21, 2025·0 cites·28 claims
- 4566US10854515B2Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formationGLOBALFOUNDRIES INC·Filed 2020·Granted Dec 1, 2020·0 cites·18 claims
- 4661US10707132B2Method to recess cobalt for gate metal applicationIBM·Filed 2019·Granted Jul 7, 2020·0 cites·16 claims
- 4761US10615078B2Method to recess cobalt for gate metal applicationIBM·Filed 2019·Granted Apr 7, 2020·0 cites·17 claims
- 4861US2025172753A1Optical solid state device including evanescently coupled optical waveguides in a stitched reticle field and methods of forming the samePSIQUANTUM CORP·Filed 2024·Application pending·0 cites
- 4955US10546785B2Method to recess cobalt for gate metal applicationIBM·Filed 2017·Granted Jan 28, 2020·0 cites·15 claims
- 5054US10026693B2Method, apparatus, and system for MOL interconnects without titanium linerGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·0 cites·8 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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