Inventor
MURAMATSU MASAHARU
JP74 patents
⚠️ This page may combine multiple inventors who share the name “MURAMATSU MASAHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HAMAMATSU PHOTONICS KK
30 patentsUS6031274AFeb 29, 2000
Back irradiation type light-receiving device and method of making the same
HAMAMATSU PHOTONICS KK75 citations96
US6204506B1Mar 20, 2001
Back illuminated photodetector and method of fabricating the same
HAMAMATSU PHOTONICS KK53 citations92
US6872992B2Mar 29, 2005
Semiconductor device for detecting wide wavelength ranges
HAMAMATSU PHOTONICS KK12 citations84
US6724062B2Apr 20, 2004
Semiconductor energy detector
HAMAMATSU PHOTONICS KK13 citations84
US5654536AAug 5, 1997
Photomultiplier having a multilayer semiconductor device
HAMAMATSU PHOTONICS KK18 citations84
US6586877B1Jul 1, 2003
Electron tube
HAMAMATSU PHOTONICS KK15 citations83
US6583558B1Jun 24, 2003
Electron tube
HAMAMATSU PHOTONICS KK13 citations83
US6703598B2Mar 9, 2004
Semiconductor photo-detecting apparatus
HAMAMATSU PHOTONICS KK15 citations82
US7550811B2Jun 23, 2009
Image pickup device and method of manufacturing the same
HAMAMATSU PHOTONICS KK7 citations74
US5780913AJul 14, 1998
Photoelectric tube using electron beam irradiation diode as anode
HAMAMATSU PHOTONICS KK15 citations74
US10283551B2May 7, 2019
Back-illuminated solid-state imaging element
HAMAMATSU PHOTONICS KK5 citations73
US11127777B2Sep 21, 2021
Solid state imaging device
HAMAMATSU PHOTONICS KK2 citations72
US10573769B2Feb 25, 2020
Backside-illuminated energy ray detection element
HAMAMATSU PHOTONICS KK2 citations72
US7696595B2Apr 13, 2010
Semiconductor device and method for manufacturing the same
HAMAMATSU PHOTONICS KK2 citations63
US7148551B2Dec 12, 2006
Semiconductor energy detector
HAMAMATSU PHOTONICS KK5 citations63
US11908880B2Feb 20, 2024
Solid state imaging device
HAMAMATSU PHOTONICS KK0 citations62
US11482555B2Oct 25, 2022
Semiconductor device and method for manufacturing semiconductor device
HAMAMATSU PHOTONICS KK0 citations62
US11094547B2Aug 17, 2021
Method for producing wiring structure
HAMAMATSU PHOTONICS KK0 citations62
US11088190B2Aug 10, 2021
Optical semiconductor device
HAMAMATSU PHOTONICS KK1 citations62
US8367999B2Feb 5, 2013
Solid state imaging device comprising dummy regions each containing a multiplication register and an amplifier
HAMAMATSU PHOTONICS KK2 citations62
US10700116B2Jun 30, 2020
Rear-surface-incident solid state imaging element and method for manufacturing same
HAMAMATSU PHOTONICS KK0 citations52
US10573556B2Feb 25, 2020
Wiring structure and method for producing wiring structure
HAMAMATSU PHOTONICS KK0 citations52
US9749561B2Aug 29, 2017
Solid-state image pickup device and method for manufacturing solid-state image pickup device
HAMAMATSU PHOTONICS KK1 citations52
US11942506B2Mar 26, 2024
Solid state imaging device
HAMAMATSU PHOTONICS KK0 citations51
US11862659B2Jan 2, 2024
Backside incident-type imaging element
HAMAMATSU PHOTONICS KK0 citations51
US10825730B2Nov 3, 2020
Manufacturing method for solid-state imaging device and solid-state imaging device
HAMAMATSU PHOTONICS KK0 citations50
US10068800B2Sep 4, 2018
Manufacturing method for solid-state imaging device and solid-state imaging device
HAMAMATSU PHOTONICS KK0 citations50
US9635293B2Apr 25, 2017
Solid-state imaging device
HAMAMATSU PHOTONICS KK0 citations42
US9401381B2Jul 26, 2016
Solid-state image pickup device
HAMAMATSU PHOTONICS KK0 citations42
US7612442B2Nov 3, 2009
Semiconductor device
HAMAMATSU PHOTONICS KK0 citations42
SUZUKI HISANORI
9 patentsUS9609247B2Mar 28, 2017
Solid-state imaging device performing feed-forward control of multiplication factor of multiplication register to match dynamic range of the device with the intensity distribution of incident light
SUZUKI HISANORI2 citations72
US9000492B2Apr 7, 2015
Back-illuminated solid-state image pickup device
SUZUKI HISANORI5 citations72
US9048164B2Jun 2, 2015
Solid-state image sensing device containing electron multiplication function having N-type floating diffusion (FD) region formed within a P-type well region
SUZUKI HISANORI2 citations62
US8466498B2Jun 18, 2013
Solid state image device having a pair of overflow drains extends along the electron transfer direction at a boundary between channel region and channel stop isolation regions of the multiplication register
SUZUKI HISANORI3 citations62
US8446500B2May 21, 2013
Solid-state imaging device having photoelectric converting portions and first and second transfer portions
SUZUKI HISANORI2 citations62
US8415604B2Apr 9, 2013
Solid-state imaging device
SUZUKI HISANORI4 citations62
US8624301B2Jan 7, 2014
Back-illuminated solid-state image pickup device
SUZUKI HISANORI0 citations52
US8754355B2Jun 17, 2014
Charge multiplying solid state imaging device having multiplication register units with different number of multiplication stages
SUZUKI HISANORI0 citations51
US8520111B2Aug 27, 2013
Solid-state imaging device including a plurality of units each having a corner register
SUZUKI HISANORI0 citations51
KLA TENCOR CORP
3 patentsUS9748294B2Aug 29, 2017
Anti-reflection layer for back-illuminated sensor
KLA TENCOR CORP15 citations92
US10269842B2Apr 23, 2019
Anti-reflection layer for back-illuminated sensor
KLA TENCOR CORP5 citations84
US11114489B2Sep 7, 2021
Back-illuminated sensor and a method of manufacturing a sensor
KLA TENCOR CORP4 citations73
KOBAYASHI HIROYA
3 patentsHITACHI LTD
1 patentYAMAMURA KAZUHISA
1 patentMIYAZAKI YASUHITO
1 patentIKEYA Tomohiro
1 patentHAMMATSU PHOTONICS K K
1 patentShowing the top 50 of 74 patents by PatentIndex Score.