Semiconductor device and method for manufacturing the same

Abstract

With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10 , a wiring substrate 20 , conductive bumps 30 , and a resin 32 . A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10 . Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20 . Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30 . This resin 32 is a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portion 14 and wiring substrate 20 except for portions of the periphery.

1. A back-illuminated semiconductor device comprising:
 a semiconductor substrate, having:
 a photodetecting unit formed on one surface, 
 a thinned portion formed by etching a region, opposing the photodetecting unit, of another surface, 
 an outer edge surrounding the thinned portion, and 
 first electrodes disposed on the one surface at the outer edge and electrically connected to the photodetecting unit; 
 
 a wiring substrate, disposed to oppose the one surface side of the semiconductor substrate and having second electrodes connected via conductive bumps to the first electrodes; and 
 a resin, filling a gap between the wiring substrate and the outer edge with the conductive bumps; and 
 wherein the resin is a resin sheet, 
 wherein a communicating portion is formed so as to laterally penetrate through the resin sheet, 
 wherein the first and second electrodes surround a space between the wiring substrate and the thinned portion of the semiconductor, 
 wherein the resin sheet surrounds said space, and 
 wherein the communicating portion penetrating the resin sheet is configured to allow air communication in it. 
 
   
   
     2. The semiconductor device according to  claim 1 ,
 wherein the resin sheet has four corners, 
 wherein there are other communicating portions laterally penetrating the resin sheet, and 
 wherein the communicating portions are respectively arranged at the four corners of the resin sheet. 
 
   
   
     3. The semiconductor device according to  claim 1 ,
 wherein the communicating portion is not sealed. 
 
   
   
     4. The semiconductor device according to  claim 1 , further comprising:
 a plurality of chip resistors disposed on a region of the wiring substrate, wherein the region on which the plurality of chip resistors are disposed opposes the thinned portion. 
 
   
   
     5. The semiconductor device according to  claim 4 ,
 wherein the plurality of chip resistors are aligned one-dimensionally.