Inventor

ENEMAN GEERT

BE19 patents

⚠️ This page may combine multiple inventors who share the name “ENEMAN GEERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ENEMAN GEERT

IMEC VZW

Method for manufacturing a transistor device

FinFET device with dual-strained channels and method for manufacturing thereof

Method for forming a transistor structure comprising a fin-shaped channel structure

Method for manufacturing transistor and associated device

Vertical fin field-effect semiconductor device

Dual channel FinFET CMOS device with common strain-relaxed buffer and method for manufacturing thereof

Strained group IV channels

Semiconductor fin structure and method of fabricating the same

Method of forming vertical field effect transistor device

Tensile strained semiconductor monocrystalline nanostructure

Strained semiconductor monocrystalline nanostructure

Method for forming a semiconductor structure and a semiconductor structure manufactured thereof

IMEC

FinFET device with dual-strained channels and method for manufacturing thereof

Methods for manufacturing semiconductor devices

Scalable quantum well device and method for manufacturing the same

Device with strained layer for quantum well confinement and method for manufacturing thereof

Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor

Method for manufacturing semiconductor devices

HELLINGS GEERT

Scalable quantum well device and method for manufacturing the same