Inventor · disambiguated record
Tsz W. Chan
Also filed as: CHAN TSZ W · CHAN TSZ WAH
19 granted patents·1 pending application·131 citations·filing 2013–2021
94Inventor score
Top patents by PatentIndex Score
20 records- 0198US10903276B2Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 26, 2021·37 cites·20 claims
- 0296US9281471B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·14 cites·13 claims
- 0395US10193064B2Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming sameMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 29, 2019·8 cites·16 claims
- 0495US9716225B2Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming sameMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 25, 2017·10 cites·27 claims
- 0595US9673256B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·9 cites·20 claims
- 0693US10923657B2Methods of forming memory cells and memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·5 cites·18 claims
- 0792US10177198B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 8, 2019·6 cites·17 claims
- 0891US9306159B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·10 cites·14 claims
- 0988US10692572B2Variable resistance memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 23, 2020·2 cites·22 claims
- 1088US10418554B2Methods of forming memory cells and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·3 cites·18 claims
- 1187US10079340B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 18, 2018·6 cites·23 claims
- 1286US10510805B2Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 17, 2019·4 cites·18 claims
- 1384US10224479B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 5, 2019·4 cites·16 claims
- 1483US10381072B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 13, 2019·6 cites·12 claims
- 1582US10720574B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 21, 2020·1 cites·20 claims
- 1682US10546895B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 28, 2020·2 cites·17 claims
- 1782US10325653B2Variable resistance memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 18, 2019·4 cites·20 claims
- 1876US11672191B2Semiconductor devices comprising threshold switching materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1953US2015171321A1Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 2047US11133461B2Laminate diffusion barriers and related devices and methodsINTEL CORP·Filed 2014·Granted Sep 28, 2021·0 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →