Inventor
YOO HYANGKEUN
KR51 patents
Patents
50 patentsUS10490571B2Nov 26, 2019
Semiconductor device having ferroelectric layer and method of manufacturing the same
SK HYNIX INC17 citations93
US10720437B2Jul 21, 2020
Ferroelectric memory device having vertical channel between source line and bit line
SK HYNIX INC17 citations86
US10854707B2Dec 1, 2020
Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layer
SK HYNIX INC10 citations84
US10734409B2Aug 4, 2020
Semiconductor devices including ferroelectric layer and methods of fabricating the same
SK HYNIX INC7 citations84
US10475813B2Nov 12, 2019
Ferroelectric memory device and method of manufacturing the same
SK HYNIX INC7 citations84
US10374054B2Aug 6, 2019
Ferroelectric memory devices
SK HYNIX INC7 citations84
US11488979B2Nov 1, 2022
Semiconductor device of three-dimensional structure including ferroelectric layer
SK HYNIX INC2 citations73
US11430812B2Aug 30, 2022
Nonvolatile memory device including ferroelectric layer having negative capacitance
SK HYNIX INC2 citations73
US11362143B2Jun 14, 2022
Nonvolatile memory device having three-dimensional structure
SK HYNIX INC5 citations73
US11244959B2Feb 8, 2022
Semiconductor device having ferroelectric material and method of fabricating the same
SK HYNIX INC2 citations73
US10804295B2Oct 13, 2020
Ferroelectric memory device
SK HYNIX INC2 citations73
US10804294B2Oct 13, 2020
Ferroelectric device and method of manufacturing the same
SK HYNIX INC5 citations73
US10529852B2Jan 7, 2020
Ferroelectric memory device and method of manufacturing the same
SK HYNIX INC2 citations73
US10522564B2Dec 31, 2019
Ferroelectric memory device and method of manufacturing the same
SK HYNIX INC4 citations73
US10453514B2Oct 22, 2019
Ferroelectric memory device and method of manufacturing the same
SK HYNIX INC3 citations73
US12382846B2Aug 5, 2025
Ferroelectric components and cross point array devices including the ferroelectric components
SK HYNIX INC0 citations62
US12108606B2Oct 1, 2024
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC0 citations62
US12051751B2Jul 30, 2024
Ferroelectric memory device
SK HYNIX INC0 citations62
US11848193B2Dec 19, 2023
Ferroelectric semiconductor device and method of manufacturing the same
SK HYNIX INC0 citations62
US11825660B2Nov 21, 2023
Semiconductor device having ferroelectric material and method of fabricating the same
SK HYNIX INC0 citations62
US11812618B2Nov 7, 2023
Nonvolatile memory device including ferroelectric layer having negative capacitance
SK HYNIX INC0 citations62
US11800719B2Oct 24, 2023
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC0 citations62
US11515419B2Nov 29, 2022
Ferroelectric semiconductor device and method of manufacturing the same
SK HYNIX INC1 citations62
US11508846B2Nov 22, 2022
Ferroelectric memory device
SK HYNIX INC0 citations62
US11502248B2Nov 15, 2022
Ferroelectric components and cross point array devices including the ferroelectric components
SK HYNIX INC0 citations62
US11482667B2Oct 25, 2022
Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers
SK HYNIX INC0 citations62
US11456318B2Sep 27, 2022
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC0 citations62
US11393846B2Jul 19, 2022
Ferroelectric memory device having ferroelectric induction layer and method of manufacturing the same
SK HYNIX INC1 citations62
US11362107B2Jun 14, 2022
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC1 citations62
US11309354B2Apr 19, 2022
Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same
SK HYNIX INC1 citations62
US10978483B2Apr 13, 2021
Ferroelectric memory device
SK HYNIX INC0 citations62
US10964721B2Mar 30, 2021
Semiconductor devices including ferroelectric layer and methods of fabricating the same
SK HYNIX INC0 citations62
US10923501B2Feb 16, 2021
Ferroelectric memory device and method of manufacturing the same
SK HYNIX INC0 citations62
US10903363B2Jan 26, 2021
Ferroelectric semiconductor device
SK HYNIX INC1 citations62
US10847721B2Nov 24, 2020
Nonvolatile memory device
SK HYNIX INC1 citations62
US10847541B2Nov 24, 2020
Ferroelectric memory device and a method of manufacturing the same
SK HYNIX INC1 citations62
US10593699B2Mar 17, 2020
Ferroelectric memory device
SK HYNIX INC1 citations62
US10475653B2Nov 12, 2019
Methods of fabricating ferroelectric memory devices
SK HYNIX INC1 citations62
US10475924B2Nov 12, 2019
Ferroelectric memory devices
SK HYNIX INC1 citations62
US11871569B2Jan 9, 2024
Nonvolatile memory device having multiple numbers of channel layers
SK HYNIX INC0 citations61
US11424269B2Aug 23, 2022
Method of fabricating vertical memory device
SK HYNIX INC1 citations61
US11164885B2Nov 2, 2021
Nonvolatile memory device having multiple numbers of channel layers
SK HYNIX INC0 citations61
US10937808B2Mar 2, 2021
Vertical memory device and method of fabricating the same
SK HYNIX INC1 citations61
US12108611B2Oct 1, 2024
Nonvolatile memory device having resistance change layer
SK HYNIX INC0 citations52
US11469272B2Oct 11, 2022
Nonvolatile memory device having resistance change memory layer
SK HYNIX INC0 citations52
US11056188B2Jul 6, 2021
Three dimensional nonvolatile memory device including channel structure and resistance change memory layer
SK HYNIX INC0 citations52
US11056508B2Jul 6, 2021
Ferroelectric memory device
SK HYNIX INC0 citations52
US10763360B2Sep 1, 2020
Ferroelectric memory device and method of manufacturing the same
SK HYNIX INC0 citations52
US10529404B2Jan 7, 2020
Method of operating ferroelectric device
SK HYNIX INC0 citations52
US10861878B2Dec 8, 2020
Semiconductor device having ferroelectric layer and method of manufacturing the same
SK HYNIX INC0 citations51
Showing the top 50 of 51 patents by PatentIndex Score.