P

Inventor

KIM HUI-JUNG

KR85 patents
⚠️ This page may combine multiple inventors who share the name “KIM HUI-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

40 patents
US10784272B2Sep 22, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US10468350B2Nov 5, 2019

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD12 citations92
US7977725B2Jul 12, 2011

Integrated circuit semiconductor device including stacked level transistors

SAMSUNG ELECTRONICS CO LTD20 citations92
US10468414B2Nov 5, 2019

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD17 citations86
US11195836B2Dec 7, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10978397B2Apr 13, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations84
US10615164B2Apr 7, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US8373214B2Feb 12, 2013

Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US8053316B2Nov 8, 2011

Method of fabricating vertical channel transistor

SAMSUNG ELECTRONICS CO LTD9 citations84
US7902026B2Mar 8, 2011

Method of fabricating semiconductor device having vertical channel transistor

SAMSUNG ELECTRONICS CO LTD12 citations84
US7872302B2Jan 18, 2011

Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate

SAMSUNG ELECTRONICS CO LTD10 citations84
US10825819B2Nov 3, 2020

Semiconductor device including spacer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations83
US10461153B2Oct 29, 2019

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US10361205B2Jul 23, 2019

Semiconductor devices including structures for reduced leakage current and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations82
US7999309B2Aug 16, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations74
US11844212B2Dec 12, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD1 citations73
US11696434B2Jul 4, 2023

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11355509B2Jun 7, 2022

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11101283B2Aug 24, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US10535605B2Jan 14, 2020

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US7952140B2May 31, 2011

Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby

SAMSUNG ELECTRONICS CO LTD6 citations73
US11100958B2Aug 24, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US10910378B2Feb 2, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD5 citations72
US10580876B2Mar 3, 2020

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD6 citations72
US10770463B2Sep 8, 2020

Semiconductor devices including structures for reduced leakage current and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US11502084B2Nov 15, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations70
US11289488B2Mar 29, 2022

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations70
US12426340B2Sep 23, 2025

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations63
US11538861B2Dec 27, 2022

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations63
US11152369B2Oct 19, 2021

Method of forming an integrated circuit device including a lower electrode on a sidewall of a support column extending vertical on a top surface of a substrate, a dielectric layer surrounding the support column and the lower electrode, and an upper electrode surrounding the dielectric layer

SAMSUNG ELECTRONICS CO LTD0 citations63
US10943782B2Mar 9, 2021

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US10937833B2Mar 2, 2021

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations63
US10629600B2Apr 21, 2020

Integrated circuit device including a support pattern, a lower electrode pattern, a dielectric structure, and an upper electrode structure

SAMSUNG ELECTRONICS CO LTD1 citations63
US10510759B2Dec 17, 2019

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations63
US12453082B2Oct 21, 2025

Semiconductor device having a cell separation pattern in contact with the bit line contact

SAMSUNG ELECTRONICS CO LTD0 citations62
US12419049B2Sep 16, 2025

Semiconductor memory device including symmetrical channel patterns and wordlines

SAMSUNG ELECTRONICS CO LTD0 citations62
US12052855B2Jul 30, 2024

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11963364B2Apr 16, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11903184B2Feb 13, 2024

Semiconductor memory devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62

KIM HUI-JUNG

3 patents

YOON JAE-MAN

2 patents

KIM KANG-UK

2 patents

LG CHEMICAL LTD

1 patent

CHUNG HYUN-WOO

1 patent

CHANG JAE-HONG

1 patent

Showing the top 50 of 85 patents by PatentIndex Score.