Inventor
KIM HUI-JUNG
KR85 patents
⚠️ This page may combine multiple inventors who share the name “KIM HUI-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
40 patentsUS10784272B2Sep 22, 2020
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD25 citations94
US10468350B2Nov 5, 2019
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations92
US7977725B2Jul 12, 2011
Integrated circuit semiconductor device including stacked level transistors
SAMSUNG ELECTRONICS CO LTD20 citations92
US10468414B2Nov 5, 2019
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD17 citations86
US11195836B2Dec 7, 2021
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US10978397B2Apr 13, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations84
US10615164B2Apr 7, 2020
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US8373214B2Feb 12, 2013
Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US8053316B2Nov 8, 2011
Method of fabricating vertical channel transistor
SAMSUNG ELECTRONICS CO LTD9 citations84
US7902026B2Mar 8, 2011
Method of fabricating semiconductor device having vertical channel transistor
SAMSUNG ELECTRONICS CO LTD12 citations84
US7872302B2Jan 18, 2011
Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate
SAMSUNG ELECTRONICS CO LTD10 citations84
US10825819B2Nov 3, 2020
Semiconductor device including spacer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US10461153B2Oct 29, 2019
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US10361205B2Jul 23, 2019
Semiconductor devices including structures for reduced leakage current and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations82
US7999309B2Aug 16, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations74
US11844212B2Dec 12, 2023
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations73
US11696434B2Jul 4, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11355509B2Jun 7, 2022
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11101283B2Aug 24, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10535605B2Jan 14, 2020
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US7952140B2May 31, 2011
Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby
SAMSUNG ELECTRONICS CO LTD6 citations73
US11100958B2Aug 24, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10910378B2Feb 2, 2021
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US10580876B2Mar 3, 2020
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD6 citations72
US10770463B2Sep 8, 2020
Semiconductor devices including structures for reduced leakage current and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11502084B2Nov 15, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations70
US11289488B2Mar 29, 2022
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations70
US12426340B2Sep 23, 2025
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations63
US11538861B2Dec 27, 2022
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations63
US11152369B2Oct 19, 2021
Method of forming an integrated circuit device including a lower electrode on a sidewall of a support column extending vertical on a top surface of a substrate, a dielectric layer surrounding the support column and the lower electrode, and an upper electrode surrounding the dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations63
US10943782B2Mar 9, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US10937833B2Mar 2, 2021
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations63
US10629600B2Apr 21, 2020
Integrated circuit device including a support pattern, a lower electrode pattern, a dielectric structure, and an upper electrode structure
SAMSUNG ELECTRONICS CO LTD1 citations63
US10510759B2Dec 17, 2019
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations63
US12453082B2Oct 21, 2025
Semiconductor device having a cell separation pattern in contact with the bit line contact
SAMSUNG ELECTRONICS CO LTD0 citations62
US12419049B2Sep 16, 2025
Semiconductor memory device including symmetrical channel patterns and wordlines
SAMSUNG ELECTRONICS CO LTD0 citations62
US12052855B2Jul 30, 2024
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11963364B2Apr 16, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11903184B2Feb 13, 2024
Semiconductor memory devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
KIM HUI-JUNG
3 patentsUS8552472B2Oct 8, 2013
Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same
KIM HUI-JUNG20 citations92
US8304824B2Nov 6, 2012
Semiconductor device comprising buried word lines
KIM HUI-JUNG8 citations83
US9111960B2Aug 18, 2015
Semiconductor devices with vertical channel transistors
KIM HUI-JUNG5 citations72
YOON JAE-MAN
2 patentsKIM KANG-UK
2 patentsLG CHEMICAL LTD
1 patentCHUNG HYUN-WOO
1 patentCHANG JAE-HONG
1 patentShowing the top 50 of 85 patents by PatentIndex Score.