Inventor

NAKAO MOTOI

JP8 patents

⚠️ This page may combine multiple inventors who share the name “NAKAO MOTOI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOSIDEN CORP

4 patents

US7128788B2Oct 31, 2006

Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate

HOSIDEN CORP2 citations61

US6927144B2Aug 9, 2005

Method for manufacturing buried insulating layer type single crystal silicon carbide substrate

HOSIDEN CORP2 citations61

US7084049B2Aug 1, 2006

Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate

HOSIDEN CORP0 citations51

US7077875B2Jul 18, 2006

Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

HOSIDEN CORP0 citations51

OSAKA PREFECTURE

2 patents

US6773508B2Aug 10, 2004

Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same

OSAKA PREFECTURE5 citations61

US7393763B2Jul 1, 2008

Manufacturing method of monocrystalline gallium nitride localized substrate

OSAKA PREFECTURE1 citations50

HORIBA LTD

1 patent

US6053035AApr 25, 2000

Material evaluation method

HORIBA LTD8 citations71

DAICEL CORP

1 patent

US12258507B2Mar 25, 2025

Fluorescent diamond and method for producing same

DAICEL CORP0 citations61