Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same

Abstract

To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G 1 to G 4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200 , a gas treatment means 500 for treating argon gas as an inert gas G 1 , propane gas as a hydrocarbon-based gas G 2 , hydrogen gas as a carrier gas, and oxygen gas G 4 supplied to the film-formation chamber 200 , and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

What is claimed is:  
     
       1. A single crystal silicon carbide thin film fabrication method for converting a silicon layer on the surface of a SOI substrate for film-formation into a single crystal silicon carbide thin film by a chemical reaction, wherein said method comprises steps of setting said SOI substrate for film-formation in a film-formation chamber and increasing the ambient temperature of the film-formation chamber to 1,200 to 1,405° C. while passing hydrogen gas and passing also a hydrocarbon-based gas being kept in a ratio of 1 to 5% by volume to hydrogen gas. 
     
     
       2. The single crystal silicon carbide thin film fabrication method according to  claim 1 , wherein said chemical reaction is carried out under atmospheric pressure. 
     
     
       3. The single crystal silicon carbide thin film fabrication method according to  claim 1  or  claim 2 , wherein said chemical reaction is carried out to an excess extent until a carbon thin film is deposited on the obtained single crystal silicon carbide thin film. 
     
     
       4. The single crystal silicon carbide thin film fabrication method according to  claim 3 , wherein said carbon thin film excessively deposited on said single crystal silicon carbide thin film is removed by etching by heating said SOI substrate for film-formation to 550° C. or higher under the atmosphere of an inert gas mixed with oxygen gas in a prescribed ratio. 
     
     
       5. A single crystal silicon carbide thin film fabrication apparatus comprising a film-formation chamber adapted to receive a SOI substrate for film-formation, a gas supply means for supplying various gases necessary to fabricate a single crystal silicon carbide thin film to said film-formation chamber, a gas treatment means for treating gases supplied to said film-formation chamber, and a temperature control means for controlling the temperature of said film-formation chamber.