Inventor · disambiguated record
Fumihiko Jobe
Also filed as: JOBE FUMIHIKO
7 granted patents·1 pending application·10 citations·filing 2002–2005
77Inventor score
Top patents by PatentIndex Score
8 records- 0168US7128788B2Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrateHOSIDEN CORP·Filed 2004·Granted Oct 31, 2006·2 cites·5 claims
- 0263US6773508B2Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the sameOSAKA PREFECTURE·Filed 2002·Granted Aug 10, 2004·5 cites·5 claims
- 0361US7393763B2Manufacturing method of monocrystalline gallium nitride localized substrateOSAKA PREFECTURE·Filed 2005·Granted Jul 1, 2008·1 cites·2 claims
- 0461US7084049B2Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrateHOSIDEN CORP·Filed 2003·Granted Aug 1, 2006·0 cites·4 claims
- 0555US7077875B2Manufacturing device for buried insulating layer type single crystal silicon carbide substrateHOSIDEN CORP·Filed 2005·Granted Jul 18, 2006·0 cites·9 claims
- 0654US6927144B2Method for manufacturing buried insulating layer type single crystal silicon carbide substrateHOSIDEN CORP·Filed 2004·Granted Aug 9, 2005·2 cites·6 claims
- 0741US2004099871A1Monocrystalline gallium nitride localized substrate and manufacturing method thereofOSAKA PREFECTURE·Filed 2003·Application pending·0 cites
- 0839US6743729B2Etching method and etching apparatus of carbon thin filmOSAKA PREFECTURE·Filed 2002·Granted Jun 1, 2004·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →