Monocrystalline gallium nitride localized substrate and manufacturing method thereof

Abstract

There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200 . Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

What is claimed is:  
     
         1 . A monocrystalline gallium nitride localized substrate comprising an area of grown monocrystalline gallium nitride locally on a monocrystalline silicon substrate.  
     
     
         2 . A monocrystalline gallium nitride localized substrate according to  claim 1 , wherein said monocrystalline gallium nitride is grown on silicon carbide formed on the monocrystalline silicon substrate.  
     
     
         3 . A monocrystalline gallium nitride localized substrate according to any one of claims  1  and  2 , wherein said monocrystalline gallium nitride is grown by using silicon nitride as a mask.  
     
     
         4 . A monocrystalline gallium nitride localized substrate according to any one of claims  1  and  2 , wherein said monocrystalline gallium nitride is grown by using silicon oxide as a mask.  
     
     
         5 . A monocrystalline gallium nitride localized substrate according to any one of  claims 1  to  4 , wherein said monocrystalline silicon substrate is an SOI substrate.  
     
     
         6 . A method of manufacturing a monocrystalline gallium nitride localized substrate comprising the steps of: 
 forming silicon carbide on a monocrystalline silicon substrate; and    locally forming monocrystalline gallium nitride on said silicon carbide;    the method, wherein silicon nitride or silicon oxide is used as a mask in forming said monocrystalline gallium nitride.