Inventor · disambiguated record
Yi-Yiing Chiang
Also filed as: CHIANG YI-YIING
8 granted patents·7 pending applications·22 citations·filing 2005–2008
81Inventor score
Top patents by PatentIndex Score
15 records- 0181US7344978B2Fabrication method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 18, 2008·9 cites·10 claims
- 0281US7214988B2Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 8, 2007·8 cites·9 claims
- 0372US7229920B2Method of fabricating metal silicide layerUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 12, 2007·4 cites·18 claims
- 0457US7649263B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 19, 2010·1 cites·11 claims
- 0552US7572722B2Method of fabricating nickel silicideUNITED MICROELECTRONICS CORP·Filed 2007·Granted Aug 11, 2009·0 cites·10 claims
- 0650US7385294B2Semiconductor device having nickel silicide and method of fabricating nickel silicideUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 10, 2008·0 cites·7 claims
- 0747US7595234B2Fabricating method for a metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 29, 2009·0 cites·22 claims
- 0843US7595264B2Fabrication method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Sep 29, 2009·0 cites·16 claims
- 0940US2007045227A1Method of stripping photoresistWU CHIH-NING·Filed 2005·Application pending·0 cites
- 1040US2007087573A1Pre-treatment method for physical vapor deposition of metal layer and method of forming metal silicide layerCHIANG YI-YIING·Filed 2005·Application pending·0 cites
- 1139US2007082494A1Method for forming silicide layerUNITED MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1236US2007059878A1Salicide processCHANG YU-LAN·Filed 2005·Application pending·0 cites
- 1335US2007166936A1Pre-amorphization implantation process and salicide processTSAO PO-CHAO·Filed 2006·Application pending·0 cites
- 1433US2006240666A1Method of forming silicideHSIEH CHAO-CHING·Filed 2005·Application pending·0 cites
- 1530US2007020925A1Method of forming a nickel platinum silicideHSIEH CHAO-CHING·Filed 2005·Application pending·0 cites
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