Inventor · disambiguated record
Darsen D. Lu
Also filed as: LU DARSEN · LU DARSEN D · LU DARSEN DUANE
40 granted patents·3 pending applications·91 citations·filing 2013–2024
97Inventor score
Top patents by PatentIndex Score
43 records- 0196US9455250B1Distributed decoupling capacitorIBM·Filed 2015·Granted Sep 27, 2016·12 cites·15 claims
- 0295US9786737B2FinFET with reduced parasitic capacitanceIBM·Filed 2015·Granted Oct 10, 2017·10 cites·15 claims
- 0395US9548386B1Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devicesIBM·Filed 2015·Granted Jan 17, 2017·11 cites·13 claims
- 0493US9525027B2Lateral bipolar junction transistor having graded SiGe baseGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 20, 2016·13 cites·14 claims
- 0592US9583492B2Structure and method for advanced bulk fin isolationIBM·Filed 2016·Granted Feb 28, 2017·6 cites·18 claims
- 0690US9515171B1Radiation tolerant device structureIBM·Filed 2015·Granted Dec 6, 2016·6 cites·20 claims
- 0790US9299618B1Structure and method for advanced bulk fin isolationIBM·Filed 2014·Granted Mar 29, 2016·7 cites·15 claims
- 0889US9553173B1Asymmetric finFET memory access transistorIBM·Filed 2015·Granted Jan 24, 2017·5 cites·15 claims
- 0988US9653541B2Structure and method to make strained FinFET with improved junction capacitance and low leakageIBM·Filed 2015·Granted May 16, 2017·4 cites·19 claims
- 1082US9543323B2Strain release in PFET regionsIBM·Filed 2015·Granted Jan 10, 2017·3 cites·14 claims
- 1181US9362400B1Semiconductor device including dielectrically isolated finFETs and buried stressorIBM·Filed 2015·Granted Jun 7, 2016·3 cites·19 claims
- 1279US9583624B1Asymmetric finFET memory access transistorIBM·Filed 2015·Granted Feb 28, 2017·2 cites·6 claims
- 1378US10243042B2FinFET with reduced parasitic capacitanceIBM·Filed 2017·Granted Mar 26, 2019·1 cites·4 claims
- 1478US10177223B2FinFET with reduced parasitic capacitanceIBM·Filed 2017·Granted Jan 8, 2019·1 cites·10 claims
- 1574US9276113B2Structure and method to make strained FinFET with improved junction capacitance and low leakageIBM·Filed 2014·Granted Mar 1, 2016·2 cites·19 claims
- 1673US10056474B2Semiconductor structures having increased channel strain using fin release in gate regionsIBM·Filed 2015·Granted Aug 21, 2018·1 cites·13 claims
- 1772US9954083B2Semiconductor structures having increased channel strain using fin release in gate regionsIBM·Filed 2015·Granted Apr 24, 2018·1 cites·2 claims
- 1871US10903208B2Distributed decoupling capacitorIBM·Filed 2020·Granted Jan 26, 2021·0 cites·18 claims
- 1969US11728428B2Dielectric isolated fin with improved fin profileIBM·Filed 2019·Granted Aug 15, 2023·0 cites·20 claims
- 2066US10886385B2Semiconductor structures having increased channel strain using fin release in gate regionsIBM·Filed 2019·Granted Jan 5, 2021·0 cites·20 claims
- 2164US10734477B2FinFET with reduced parasitic capacitanceIBM·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 2263US10892364B2Dielectric isolated fin with improved fin profileIBM·Filed 2017·Granted Jan 12, 2021·0 cites·13 claims
- 2362US10347752B2Semiconductor structures having increased channel strain using fin release in gate regionsIBM·Filed 2018·Granted Jul 9, 2019·0 cites·17 claims
- 2461US9034715B2Method and structure for dielectric isolation in a fin field effect transistorIBM·Filed 2013·Granted May 19, 2015·1 cites·9 claims
- 2560US10546955B2Dielectric isolated fin with improved fin profileIBM·Filed 2016·Granted Jan 28, 2020·0 cites·13 claims
- 2660US9917188B2Dielectric isolated fin with improved fin profileIBM·Filed 2016·Granted Mar 13, 2018·0 cites·19 claims
- 2760US9548213B2Dielectric isolated fin with improved fin profileIBM·Filed 2014·Granted Jan 17, 2017·0 cites·18 claims
- 2859US10622451B1Flash memory with multiple control gates and flash memory array device made thereofUNIV NAT CHENG KUNG·Filed 2018·Granted Apr 14, 2020·2 cites·17 claims
- 2957US10593663B2Distributed decoupling capacitorIBM·Filed 2016·Granted Mar 17, 2020·0 cites·15 claims
- 3057US10262991B2Distributed decoupling capacitorIBM·Filed 2016·Granted Apr 16, 2019·0 cites·20 claims
- 3156US11785778B2Ferroelectric memory and memory array device with multiple independently controlled gatesUNIV NAT CHENG KUNG·Filed 2021·Granted Oct 10, 2023·0 cites·13 claims
- 3256US9997540B2Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devicesIBM·Filed 2017·Granted Jun 12, 2018·0 cites·17 claims
- 3355US9966387B2Strain release in pFET regionsIBM·Filed 2016·Granted May 8, 2018·0 cites·15 claims
- 3455US9761610B2Strain release in PFET regionsIBM·Filed 2016·Granted Sep 12, 2017·0 cites·14 claims
- 3555US9564439B2Structure and method for advanced bulk fin isolationIBM·Filed 2016·Granted Feb 7, 2017·0 cites·17 claims
- 3654US2015270344A1P-fet with graded silicon-germanium channelIBM·Filed 2014·Application pending·0 cites
- 3753US10153157B2P-FET with graded silicon-germanium channelIBM·Filed 2015·Granted Dec 11, 2018·0 cites·7 claims
- 3852US9825094B2FinFET PCM access transistor having gate-wrapped source and drain regionsGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 21, 2017·0 cites·15 claims
- 3952US9825093B2FinFET PCM access transistor having gate-wrapped source and drain regionsGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 21, 2017·0 cites·9 claims
- 4052US2024387543A1L-shaped field effect transistor and corresponding fabrication methods for angstrom technology nodesUNIV NAT CHENG KUNG·Filed 2024·Application pending·0 cites
- 4150US9209065B1Engineered substrate and device for co-integration of strained silicon and relaxed siliconIBM·Filed 2014·Granted Dec 8, 2015·0 cites·20 claims
- 4250US2016064210A1P-fet with graded silicon-germanium channelIBM·Filed 2015·Application pending·0 cites
- 4341US12224008B2Non-volatile static random access memoryUNIV NAT CHENG KUNG·Filed 2022·Granted Feb 11, 2025·0 cites·6 claims
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