Inventor
IWATA NAOTAKA
JP17 patents
⚠️ This page may combine multiple inventors who share the name “IWATA NAOTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
15 patentsUS6552373B2Apr 22, 2003
Hetero-junction field effect transistor having an intermediate layer
NEC CORP65 citations96
US6720200B2Apr 13, 2004
Field effect transistor and fabrication process thereof
NEC CORP19 citations92
US6534790B2Mar 18, 2003
Compound semiconductor field effect transistor
NEC CORP28 citations92
US6353360B1Mar 5, 2002
Linearized power amplifier based on active feedforward-type predistortion
NEC CORP40 citations92
US6130589AOct 10, 2000
Matching circuit and a method for matching a transistor circuit
NEC CORP34 citations92
US6072205AJun 6, 2000
Passive element circuit
NEC CORP32 citations92
US6025613AFeb 15, 2000
Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same
NEC CORP25 citations91
US6144051ANov 7, 2000
Semiconductor device having a metal-insulator-metal capacitor
NEC CORP46 citations89
US6570194B2May 27, 2003
Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same
NEC CORP12 citations73
US6426523B1Jul 30, 2002
Heterojunction field effect transistor
NEC CORP8 citations73
US6624440B2Sep 23, 2003
Field effect transistor
NEC CORP7 citations72
US6436756B1Aug 20, 2002
Semiconductor device and fabrication method thereof
NEC CORP11 citations70
US5943577AAug 24, 1999
Method of making heterojunction bipolar structure having air and implanted isolations
NEC CORP12 citations69
US6388530B1May 14, 2002
Microwave amplifier implemented by heterojunction field effect transistors
NEC CORP2 citations63
US4689646AAug 25, 1987
Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same
NEC CORP4 citations61