Inventor

CHAN HIANG C

US26 patents

Patents

26 patents

US5087586AFeb 11, 1992

Process for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layer

MICRON TECHNOLOGY INC162 citations99

US5053351AOct 1, 1991

Method of making stacked E-cell capacitor DRAM cell

MICRON TECHNOLOGY INC150 citations98

US5358894AOct 25, 1994

Oxidation enhancement in narrow masked field regions of a semiconductor wafer

MICRON TECHNOLOGY INC114 citations97

US5236860AAug 17, 1993

Lateral extension stacked capacitor

MICRON TECHNOLOGY INC107 citations96

US5170233ADec 8, 1992

Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor

MICRON TECHNOLOGY INC94 citations96

US5137842AAug 11, 1992

Stacked H-cell capacitor and process to fabricate same

MICRON TECHNOLOGY INC60 citations96

US5126280AJun 30, 1992

Stacked multi-poly spacers with double cell plate capacitor

MICRON TECHNOLOGY INC75 citations96

US5122476AJun 16, 1992

Double DRAM cell

MICRON TECHNOLOGY INC106 citations96

US5084406AJan 28, 1992

Method for forming low resistance DRAM digit-line

MICRON TECHNOLOGY INC56 citations96

US5082797AJan 21, 1992

Method of making stacked textured container capacitor

MICRON TECHNOLOGY INC99 citations96

US5057888AOct 15, 1991

Double DRAM cell

MICRON TECHNOLOGY INC56 citations96

US5084405AJan 28, 1992

Process to fabricate a double ring stacked cell structure

MICRON TECHNOLOGY INC79 citations94

US5798296AAug 25, 1998

Method of fabricating a gate having a barrier of titanium silicide

MICRON TECHNOLOGY INC29 citations93

US5281549AJan 25, 1994

Process for fabricating a stacked capacitor having an I-shaped cross-section in a dynamic random access memory array

MICRON TECHNOLOGY INC41 citations93

US5262343ANov 16, 1993

DRAM stacked capacitor fabrication process

MICRON TECHNOLOGY INC54 citations93

US5108943AApr 28, 1992

Mushroom double stacked capacitor

MICRON TECHNOLOGY INC28 citations93

US5081559AJan 14, 1992

Enclosed ferroelectric stacked capacitor

MICRON TECHNOLOGY INC43 citations93

US5313087AMay 17, 1994

Semiconductor device for minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another

MICRON TECHNOLOGY INC29 citations92

US5273924ADec 28, 1993

Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region

MICRON TECHNOLOGY INC16 citations82

US6087700AJul 11, 2000

Gate having a barrier of titanium silicide

MICRON TECHNOLOGY INC8 citations74

US5234855AAug 10, 1993

Stacked comb spacer capacitor

MICRON TECHNOLOGY INC19 citations74

US5089986AFeb 18, 1992

Mushroom double stacked capacitor

MICRON TECHNOLOGY INC15 citations74

US5236856AAug 17, 1993

Method for minimizing diffusion of conductivity enhancing impurities from one region of polysilicon layer to another region and a semiconductor device produced according to the method

MICRON TECHNOLOGY INC13 citations73

US6197662B1Mar 6, 2001

Semiconductor processing method of forming field isolation oxide using a polybuffered mask which includes a base nitride layer on the substrate, and other semiconductor processing methods

MICRON TECHNOLOGY INC2 citations63

US6107176AAug 22, 2000

Method of fabricating a gate having a barrier of titanium silicide

MICRON TECHNOLOGY INC3 citations63

US5966621AOct 12, 1999

Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate

MICRON TECHNOLOGY INC2 citations63