Inventor
LU JEN-HSIANG
TW21 patents
⚠️ This page may combine multiple inventors who share the name “LU JEN-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS11177361B2Nov 16, 2021
FinFET and gate-all-around FET with selective high-k oxide deposition
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10741654B2Aug 11, 2020
Semiconductor device and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US10522653B2Dec 31, 2019
Gate spacer structure of FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10319832B2Jun 11, 2019
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US10269907B2Apr 23, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US9947756B2Apr 17, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US10672879B2Jun 2, 2020
Method for forming FinFET and gate-all-around FET with selective high-K oxide deposition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10644125B2May 5, 2020
Metal gates and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10269968B2Apr 23, 2019
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11848363B2Dec 19, 2023
Method for forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11018242B2May 25, 2021
Gate spacer structure of FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10811517B2Oct 20, 2020
Gate spacer structure of finFET device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10692983B2Jun 23, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12433002B2Sep 30, 2025
Method for forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272736B2Apr 8, 2025
FinFET and gate-all-around FET with selective high-k oxide deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776911B2Oct 3, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11721739B2Aug 8, 2023
FinFET and gate-all-around FET with insulator having hydrophobic sidewall
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11404555B2Aug 2, 2022
Metal gates and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11024582B2Jun 1, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810963B2Nov 7, 2023
Gate spacer structure of FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61