Inventor

AZUMA MASAMICHI

US43 patents

⚠️ This page may combine multiple inventors who share the name “AZUMA MASAMICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AZUMA MASAMICHI

SYMETRIX CORP

Misted precursor deposition apparatus and method with improved mist and mist flow

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Thin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with same

Bottom electrode structure for dielectric capacitors

Integrated circuit capacitors and process for making the same

Process for making metal oxides

Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material

Thin film capacitors on silicon germanium substrate

Barium strontium titanate integrated circuit capacitors and process for making the same

Metal insulator semiconductor structure with polarization-compatible buffer layer

UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same

Thin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with same

Method of forming ABO3 films with excess B-site modifiers

Specially doped precursor solutions for use in methods of producing doped ABO3 -type average perovskite thin-film capacitors

Integrated circuit capacitors with barrier layer and process for making the same

Metal oxide integrated circuit on silicon germanium substrate

Barium strontium titanate integrated circuit capacitors and process for making the same

Methods and apparatus for material deposition using primer

Electrical component having low-leakage current and low polarization fatigue made by UV radiation process

UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Thin film capacitors on gallium arsenide substrate and process for making the same

Metal oxide integrated circuit on silicon germanium substrate

Metal insulator structure with polarization-compatible buffer layer

Thin film capacitors on gallium arsenide substrate

MATSUSHITA ELECTRONICS CORP

Capacitor for integrated circuit and its fabrication method

Fabrication method of capacitor for integrated circuit

Encapsulated capacitor structure having a dielectric interlayer

Capacitor apparatus and method of manufacture of same

Capacitor for integrated circuit and its fabrication method

Method of manufacturing a high dielectric constant capacitor

Semiconductor capacitor dielectric having various grain sizes

Method of manufacturing bi-layered ferroelectric thin film

Method of making a semiconductor device with capacitor element

Method for accelerated test of semiconductor devices

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Portable body used in two way, communication system, communication method, terminal, computer-readable recorded medium on which program is recorded

Dual-purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a program

Dual purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a program

Ferroelectric film and semiconductor device

Fabrication method of capacitor for integrated circuit

(unassigned)

Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same