Inventor
PREUSSE AXEL
DE30 patents
⚠️ This page may combine multiple inventors who share the name “PREUSSE AXEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
19 patentsUS6951816B2Oct 4, 2005
Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst
ADVANCED MICRO DEVICES INC25 citations92
US6620726B1Sep 16, 2003
Method of forming metal lines having improved uniformity on a substrate
ADVANCED MICRO DEVICES INC21 citations92
US7985329B2Jul 26, 2011
Technique for electrochemically depositing an alloy having a chemical order
ADVANCED MICRO DEVICES INC7 citations83
US7745327B2Jun 29, 2010
Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime
ADVANCED MICRO DEVICES INC13 citations79
US6974530B2Dec 13, 2005
Method and system for controlling ion distribution during plating of a metal on a workpiece surface
ADVANCED MICRO DEVICES INC13 citations79
US6103086AAug 15, 2000
Method of forming reliable copper interconnects with improved hole filling
ADVANCED MICRO DEVICES INC10 citations73
US6958247B2Oct 25, 2005
Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process
ADVANCED MICRO DEVICES INC10 citations72
US6841056B2Jan 11, 2005
Apparatus and method for treating a substrate electrochemically while reducing metal corrosion
ADVANCED MICRO DEVICES INC3 citations63
US6362100B1Mar 26, 2002
Methods and apparatus for forming a copper interconnect
ADVANCED MICRO DEVICES INC4 citations63
US7517782B2Apr 14, 2009
Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase
ADVANCED MICRO DEVICES INC2 citations62
US7169664B2Jan 30, 2007
Method of reducing wafer contamination by removing under-metal layers at the wafer edge
ADVANCED MICRO DEVICES INC3 citations62
US6774030B2Aug 10, 2004
Method and system for improving the manufacturing of metal damascene structures
ADVANCED MICRO DEVICES INC2 citations62
US6761812B2Jul 13, 2004
Apparatus and method for electrochemical metal deposition
ADVANCED MICRO DEVICES INC6 citations62
US7375031B2May 20, 2008
Technique for forming interconnect structures with reduced electro and stress migration and/or resistivity
ADVANCED MICRO DEVICES INC5 citations54
US7981793B2Jul 19, 2011
Method of forming a metal directly on a conductive barrier layer by electrochemical deposition using an oxygen-depleted ambient
ADVANCED MICRO DEVICES INC0 citations51
US7476552B2Jan 13, 2009
Method of reworking a semiconductor structure
ADVANCED MICRO DEVICES INC0 citations50
US7781329B2Aug 24, 2010
Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices
ADVANCED MICRO DEVICES INC0 citations49
US7560381B2Jul 14, 2009
Technique for metal deposition by electroless plating using an activation scheme including a substrate heating process
ADVANCED MICRO DEVICES INC1 citations48
US7615103B2Nov 10, 2009
Apparatus and method for removing bubbles from a process liquid
ADVANCED MICRO DEVICES INC0 citations47
GLOBALFOUNDRIES INC
5 patentsUS9305878B2Apr 5, 2016
Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects
GLOBALFOUNDRIES INC2 citations62
US8932911B2Jan 13, 2015
Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects
GLOBALFOUNDRIES INC2 citations62
US9620453B2Apr 11, 2017
Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof
GLOBALFOUNDRIES INC6 citations61
US7947158B2May 24, 2011
Apparatus and method for removing bubbles from a process liquid
GLOBALFOUNDRIES INC2 citations58
US8951900B2Feb 10, 2015
Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces
GLOBALFOUNDRIES INC0 citations50
SEIDEL ROBERT
2 patentsUS8883610B2Nov 11, 2014
Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines
SEIDEL ROBERT8 citations83
US8389401B2Mar 5, 2013
Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
SEIDEL ROBERT0 citations40