Inventor
WANG CHAO-HSIUNG
TW130 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHAO-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
32 patentsUS8828823B2Sep 9, 2014
FinFET device and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG194 citations99
US7229883B2Jun 12, 2007
Phase change memory device and method of manufacture thereof
TAIWAN SEMICONDUCTOR MFG88 citations98
US7208815B2Apr 24, 2007
CMOS logic gate fabricated on hybrid crystal orientations and method of forming thereof
TAIWAN SEMICONDUCTOR MFG67 citations98
US7183137B2Feb 27, 2007
Method for dicing semiconductor wafers
TAIWAN SEMICONDUCTOR MFG102 citations98
US9306069B2Apr 5, 2016
Isolation structure of fin field effect transistor
TAIWAN SEMICONDUCTOR MFG15 citations93
US9196522B2Nov 24, 2015
FinFET with buried insulator layer and method for forming
TAIWAN SEMICONDUCTOR MFG18 citations93
US9159833B2Oct 13, 2015
Fin structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG15 citations92
US7545662B2Jun 9, 2009
Method and system for magnetic shielding in semiconductor integrated circuit
TAIWAN SEMICONDUCTOR MFG31 citations92
US7381649B2Jun 3, 2008
Structure for a multiple-gate FET device and a method for its fabrication
TAIWAN SEMICONDUCTOR MFG30 citations92
US7154798B2Dec 26, 2006
MRAM arrays and methods for writing and reading magnetic memory devices
TAIWAN SEMICONDUCTOR MFG38 citations92
US6924181B2Aug 2, 2005
Strained silicon layer semiconductor product employing strained insulator layer
TAIWAN SEMICONDUCTOR MFG38 citations92
US6878610B1Apr 12, 2005
Relaxed silicon germanium substrate with low defect density
TAIWAN SEMICONDUCTOR MFG29 citations92
US7436698B2Oct 14, 2008
MRAM arrays and methods for writing and reading magnetic memory devices
TAIWAN SEMICONDUCTOR MFG41 citations90
US7071007B2Jul 4, 2006
Method of forming a low voltage drive ferroelectric capacitor
TAIWAN SEMICONDUCTOR MFG42 citations89
US9385069B2Jul 5, 2016
Gate contact structure for FinFET
TAIWAN SEMICONDUCTOR MFG5 citations84
US9337318B2May 10, 2016
FinFET with dummy gate on non-recessed shallow trench isolation (STI)
TAIWAN SEMICONDUCTOR MFG14 citations84
US9331179B2May 3, 2016
Metal gate and gate contact structure for FinFET
TAIWAN SEMICONDUCTOR MFG6 citations84
US9312354B2Apr 12, 2016
Contact etch stop layers of a field effect transistor
TAIWAN SEMICONDUCTOR MFG15 citations84
US9312363B2Apr 12, 2016
Multi-fin device and method of making same
TAIWAN SEMICONDUCTOR MFG7 citations84
US9245882B2Jan 26, 2016
FinFETs with gradient germanium-containing channels
TAIWAN SEMICONDUCTOR MFG8 citations84
US9111780B2Aug 18, 2015
Structure and method for vertical tunneling field effect transistor with leveled source and drain
TAIWAN SEMICONDUCTOR MFG7 citations84
US8981496B2Mar 17, 2015
Metal gate and gate contact structure for FinFET
TAIWAN SEMICONDUCTOR MFG11 citations84
US7357838B2Apr 15, 2008
Relaxed silicon germanium substrate with low defect density
TAIWAN SEMICONDUCTOR MFG13 citations84
US7183617B2Feb 27, 2007
Magnetic shielding for magnetically sensitive semiconductor devices
TAIWAN SEMICONDUCTOR MFG19 citations84
US7105897B2Sep 12, 2006
Semiconductor structure and method for integrating SOI devices and bulk devices
TAIWAN SEMICONDUCTOR MFG17 citations84
US7029994B2Apr 18, 2006
Strained channel on insulator device
TAIWAN SEMICONDUCTOR MFG15 citations84
US7312512B2Dec 25, 2007
Interconnect structure with polygon cell structures
TAIWAN SEMICONDUCTOR MFG13 citations82
US7265038B2Sep 4, 2007
Method for forming a multi-layer seed layer for improved Cu ECP
TAIWAN SEMICONDUCTOR MFG16 citations81
US9129918B2Sep 8, 2015
Systems and methods for annealing semiconductor structures
TAIWAN SEMICONDUCTOR MFG3 citations74
US7105879B2Sep 12, 2006
Write line design in MRAM
TAIWAN SEMICONDUCTOR MFG7 citations74
US7105928B2Sep 12, 2006
Copper wiring with high temperature superconductor (HTS) layer
TAIWAN SEMICONDUCTOR MFG7 citations74
US6873535B1Mar 29, 2005
Multiple width and/or thickness write line in MRAM
TAIWAN SEMICONDUCTOR MFG8 citations74
TAIWAN SEMICONDUCTOR MFG CO LTD
10 patentsUS9991307B2Jun 5, 2018
Stacked grid design for improved optical performance and isolation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9935011B2Apr 3, 2018
Fin spacer protected source and drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9768313B2Sep 19, 2017
Devices having transition metal dichalcogenide layers with different thicknesses and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9741810B2Aug 22, 2017
Strained channel of gate-all-around transistor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9570493B2Feb 14, 2017
Dielectric grid bottom profile for light focusing
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US9520498B2Dec 13, 2016
FinFET structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9455334B2Sep 27, 2016
Method of forming a Fin structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9418871B2Aug 16, 2016
Systems and methods for annealing semiconductor structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US11101371B2Aug 24, 2021
Structure and method for vertical tunneling field effect transistor with leveled source and drain
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10679900B2Jun 9, 2020
Fin spacer protected source and drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
LIU CHI-WEN
3 patentsLIU CHI WEN
1 patentTSMC SOLID STATE LIGHTING LTD
1 patentHUANG HSIN-CHIEH
1 patentCHEN HUNG-WEI
1 patentTAIWAN SEMICONDUCTOR MANUFACTORING COMPANY LTD
1 patentShowing the top 50 of 130 patents by PatentIndex Score.