Inventor
HWANG SUN-KYU
KR14 patents
⚠️ This page may combine multiple inventors who share the name “HWANG SUN-KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS8860089B2Oct 14, 2014
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US8385080B2Feb 26, 2013
Semiconductor module, socket for the same, and semiconductor module/socket assembly
SAMSUNG ELECTRONICS CO LTD16 citations84
US9231093B2Jan 5, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US9117890B2Aug 25, 2015
High-electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations83
US8890212B2Nov 18, 2014
Normally-off high electron mobility transistor
SAMSUNG ELECTRONICS CO LTD5 citations72
US9252255B2Feb 2, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9461637B2Oct 4, 2016
Method and apparatus for controlling a gate voltage in high electron mobility transistor
SAMSUNG ELECTRONICS CO LTD2 citations62
US9147738B2Sep 29, 2015
High electron mobility transistor including plurality of gate electrodes
SAMSUNG ELECTRONICS CO LTD3 citations62
US7902664B2Mar 8, 2011
Semiconductor package having passive component and semiconductor memory module including the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US9570597B2Feb 14, 2017
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD1 citations52
POSTECH FOUNDATION
2 patentsUS7601043B2Oct 13, 2009
Method of manufacturing microholes in a cathode substrate of a field emission display using anodic oxidation
POSTECH FOUNDATION0 citations48
US7554255B2Jun 30, 2009
Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same
POSTECH FOUNDATION0 citations40