Inventor · disambiguated record
Alice Pei-Shan Hsieh
Also filed as: HSIEH ALICE PEI-SHAN
11 granted patents·2 pending applications·5 citations·filing 2015–2020
81Inventor score
Files withINFINEON TECHNOLOGIES AMERICAS CORP8INFINEON TECHNOLOGIES AG4INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
13 records- 0177US9871128B2Bipolar semiconductor device with sub-cathode enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 16, 2018·3 cites·18 claims
- 0273US10147786B2Power semiconductor device with charge balance designINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 4, 2018·1 cites·9 claims
- 0367USRE49546EPower semiconductor device with charge balance designINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 6, 2023·0 cites·9 claims
- 0463US10164078B2Bipolar semiconductor device with multi-trench enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Dec 25, 2018·1 cites·18 claims
- 0562US10923578B2Semiconductor device comprising a barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 16, 2021·0 cites·11 claims
- 0652US10115812B2Semiconductor device having a superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·21 claims
- 0750US9799725B2IGBT having a deep superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Oct 24, 2017·0 cites·21 claims
- 0850US9685506B2IGBT having an inter-trench superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Jun 20, 2017·0 cites·20 claims
- 0950US2017338302A1Power Semiconductor Device with Charge Balance DesignINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 1048US9768284B2Bipolar semiconductor device having a charge-balanced inter-trench structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 19, 2017·0 cites·14 claims
- 1142US10998399B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 4, 2021·0 cites·19 claims
- 1242US9831330B2Bipolar semiconductor device having a deep charge-balanced structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Nov 28, 2017·0 cites·10 claims
- 1334US2017271445A1Bipolar Semiconductor Device Having Localized Enhancement RegionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →