P

Inventor

LAI WEI-JEN

TW48 patents
⚠️ This page may combine multiple inventors who share the name “LAI WEI-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

17 patents
US9419134B2Aug 16, 2016

Strain enhancement for FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12080759B2Sep 3, 2024

Transistor source/drain regions and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855207B2Dec 26, 2023

FinFET structure and method with reduced fin buckling

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11489078B2Nov 1, 2022

Lightly-doped channel extensions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11411107B2Aug 9, 2022

FinFET structure and method with reduced fin buckling

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861969B2Dec 8, 2020

Method of forming FinFET structure with reduced Fin buckling

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10141310B2Nov 27, 2018

Short channel effect suppression

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9721829B2Aug 1, 2017

FinFETs with different fin height and EPI height setting

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12302611B2May 13, 2025

FinFET structure with a composite stress layer and reduced fin buckling

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11626328B2Apr 11, 2023

Strain enhancement for FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11018061B2May 25, 2021

Strain enhancement for FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12015090B2Jun 18, 2024

Lightly-doped channel extensions

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12520526B2Jan 6, 2026

Semiconductor devices with modified source/drain feature and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12080800B2Sep 3, 2024

Semiconductor devices with modified source/drain feature and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11791402B2Oct 17, 2023

Semiconductor device having strained channels

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10290550B2May 14, 2019

Strain enhancement for FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9887100B2Feb 6, 2018

Methods of forming semiconductor devices and structures thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42

IBIS INNOTECH INC

5 patents

TAIWAN TEXTILE RES INST

5 patents

NOVATEK MICROELECTRONICS CORP

5 patents

SITRON PRECISION CO LTD

3 patents

TAIWAN SEMICONDUCTOR MFG

3 patents

LAI WEI-JEN

2 patents

FORD GLOBAL TECH LLC

2 patents

LEE TSUNG-LIN

1 patent

AU OPTRONICS CORP

1 patent

MENG HSIN-FEI

1 patent

CHANG HSI-WEN

1 patent

CHI MEI COMM SYSTEMS INC

1 patent

HSIEH CHIH-YUAN

1 patent