Inventor

NEWNS DENNIS M

US72 patents

⚠️ This page may combine multiple inventors who share the name “NEWNS DENNIS M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEWNS DENNIS M

IBM

Ferroelectric drive for data storage

Heat-shielded low power PCM-based reprogrammable EFUSE device

Quantum computing with d-wave superconductors

Method and structure for high performance phase change memory

Gradiometer-based flux qubit for quantum computing and method therefor

Method for prediction random defect yields of integrated circuits with accuracy and computation time controls

Multilayer storage class memory using externally heated phase change material

Three-terminal cascade switch for controlling static power consumption in integrated circuits

Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material

Programmable fuse/non-volatile memory structures using externally heated phase change material

Quantum computing with d-wave superconductors

Ultrafast nanoscale field effect transistor

Piezo-driven non-volatile memory cell with hysteretic resistance

BEOL cross-bar array ferroelectric synapse units for domain wall movement

Indirect readout FET

Three-terminal metastable symmetric zero-volt battery memristive device

Memristive device based on alkali-doping of transitional metal oxides

Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence

Piezoelectronic memory

Programmable via devices in back end of line level

Phase change material structure and related method

Programmable via devices with air gap isolation

Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh

Programmable via structure for three dimensional integration technology

Heat-shielded low power PCM-based reprogrammable eFUSE device

Piezoelectronic device with novel force amplification

Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unit

Three-terminal metastable symmetric zero-volt battery memristive device

Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence

Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers

Wireless keyboard

Piezoelectronic switch device for RF applications

Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers

Nano-fluidic field effective device to control DNA transport through the same

Area and power efficient implementation of resistive processing units using complementary metal oxide semiconductor technology

Area and power efficient implementation of resistive processing units using complementary metal oxide semiconductor technology

BEOL cross-bar array ferroelectric synapse units for domain wall movement

Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unit

Battery-based neural network weights

Battery-based neural network weights

Memristive device based on reversible intercalated ion transfer between two meta-stable phases

Programmable via structure for three dimensional integration technology

ELMEGREEN BRUCE G

Coupling piezoelectric material generated stresses to devices formed in integrated circuits

Coupling piezoelectric material generated stresses to devices formed in integrated circuits

Piezo-effect transistor device and applications

Hardware analog-digital neural networks

LAM CHUNG H

Drift-insensitive or invariant material for phase change memory

Drift-insensitive or invariant material for phase change memory

ABOU-KANDIL AHMED

Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh

CHEN KUAN-NENG

Programmable via devices in back end of line level