Inventor
FUKAMI SHUNSUKE
JP50 patents
⚠️ This page may combine multiple inventors who share the name “FUKAMI SHUNSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUKAMI SHUNSUKE
17 patentsUS8559214B2Oct 15, 2013
Magnetic memory device and magnetic random access memory
FUKAMI SHUNSUKE12 citations84
US8416611B2Apr 9, 2013
Magnetoresistance effect element and magnetic random access memory
FUKAMI SHUNSUKE12 citations84
US8194436B2Jun 5, 2012
Magnetic random access memory, write method therefor, and magnetoresistance effect element
FUKAMI SHUNSUKE8 citations84
US8174086B2May 8, 2012
Magnetoresistive element, and magnetic random access memory
FUKAMI SHUNSUKE8 citations84
US8159872B2Apr 17, 2012
Magnetic random access memory
FUKAMI SHUNSUKE8 citations84
US8154913B2Apr 10, 2012
Magnetoresistance effect element and magnetic random access memory
FUKAMI SHUNSUKE11 citations84
US8120950B2Feb 21, 2012
Semiconductor device
FUKAMI SHUNSUKE10 citations84
US8791534B2Jul 29, 2014
Magnetic memory device and magnetic memory
FUKAMI SHUNSUKE4 citations73
US8592930B2Nov 26, 2013
Magnetic memory element, magnetic memory and initializing method
FUKAMI SHUNSUKE4 citations63
US8149615B2Apr 3, 2012
Magnetic random access memory
FUKAMI SHUNSUKE4 citations63
US9105831B2Aug 11, 2015
Nonvolatile magnetic element and nonvolatile magnetic device
FUKAMI SHUNSUKE2 citations59
US8994130B2Mar 31, 2015
Magnetic memory element and magnetic memory
FUKAMI SHUNSUKE1 citations52
US8884388B2Nov 11, 2014
Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
FUKAMI SHUNSUKE1 citations52
US8787076B2Jul 22, 2014
Magnetic memory and method of manufacturing the same
FUKAMI SHUNSUKE1 citations52
US8565011B2Oct 22, 2013
Method of initializing magnetic memory element
FUKAMI SHUNSUKE1 citations52
US9083336B2Jul 14, 2015
Non-volatile logic operation device
FUKAMI SHUNSUKE0 citations42
US9799822B2Oct 24, 2017
Magnetic memory element and magnetic memory
FUKAMI SHUNSUKE0 citations41
UNIV TOHOKU
16 patentsUS9941468B2Apr 10, 2018
Magnetoresistance effect element and magnetic memory device
UNIV TOHOKU9 citations78
US11563169B2Jan 24, 2023
Magnetic tunnel junction element and magnetic memory
UNIV TOHOKU2 citations72
US9202545B2Dec 1, 2015
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU5 citations72
US11690299B2Jun 27, 2023
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU1 citations63
US10998491B2May 4, 2021
Magnetoresistive element and magnetic memory
UNIV TOHOKU1 citations62
US11200933B2Dec 14, 2021
Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same
UNIV TOHOKU0 citations56
US10622550B2Apr 14, 2020
Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit
UNIV TOHOKU0 citations52
US10706996B2Jul 7, 2020
Magnetic material and method of manufacturing the same
UNIV TOHOKU0 citations51
US9577182B2Feb 21, 2017
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations51
US10658572B2May 19, 2020
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations50
US10164174B2Dec 25, 2018
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU1 citations50
US12405769B2Sep 2, 2025
Random number generation unit and computing system
UNIV TOHOKU0 citations47
US12159668B2Dec 3, 2024
Magneto-optical memory interface
UNIV TOHOKU0 citations44
US11557719B2Jan 17, 2023
Magnetoresistance effect element, circuit device, and circuit unit
UNIV TOHOKU0 citations44
US10263180B2Apr 16, 2019
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations42
US10410703B2Sep 10, 2019
Magnetoresistance effect element and magnetic memory device
UNIV TOHOKU0 citations37
NEC CORP
8 patentsUS8379429B2Feb 19, 2013
Domain wall motion element and magnetic random access memory
NEC CORP20 citations92
US8040724B2Oct 18, 2011
Magnetic domain wall random access memory
NEC CORP22 citations92
US8023315B2Sep 20, 2011
Magnetoresistive effect element and magnetic random access memory
NEC CORP20 citations92
US7936627B2May 3, 2011
Magnetoresistance effect element and MRAM
NEC CORP29 citations92
US7929342B2Apr 19, 2011
Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
NEC CORP29 citations92
US10020039B2Jul 10, 2018
Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method
NEC CORP10 citations83
US8363461B2Jan 29, 2013
Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory
NEC CORP5 citations73
US7848137B2Dec 7, 2010
MRAM and data read/write method for MRAM
NEC CORP2 citations63
SUZUKI TETSUHIRO
4 patentsUS8503222B2Aug 6, 2013
Non-volatile logic circuit
SUZUKI TETSUHIRO11 citations83
US8174873B2May 8, 2012
Magnetic random access memory and initializing method for the same
SUZUKI TETSUHIRO11 citations83
US8625327B2Jan 7, 2014
Magnetic random access memory and initializing method for the same
SUZUKI TETSUHIRO3 citations58
US8537604B2Sep 17, 2013
Magnetoresistance element, MRAM, and initialization method for magnetoresistance element
SUZUKI TETSUHIRO0 citations51