Inventor

SUZUKI TETSUHIRO

JP50 patents

⚠️ This page may combine multiple inventors who share the name “SUZUKI TETSUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUZUKI TETSUHIRO

NEC CORP

Domain wall motion element and magnetic random access memory

Magnetic domain wall random access memory

Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory

Magnetic random access memory, and production method therefor

Magnetic random access memory and method for manufacturing the same

Transducer utilizing giant magnetoresistance effect and having a ferromagnetic layer pinned in a direction perpendicular to a direction of a signal magnetic field

Magnetic random access memory

Magnetic memory adopting synthetic antiferromagnet as free magnetic layer

High sensitivity, low distortion yoke-type magnetoresistive head

Magnetoresistive head with conductive underlayer

Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory

Magnetic memory and manufacturing method for the same

Magnetoresistive element and magnetic random access memory

Magnetoresistive head and method of initialization having a non-planar anti-ferromagnetic layer

Thin film magnetic head, manufacturing method thereof and magnetic storage

Memory cell and magnetic random access memory

Magnetic random access memory and method for manufacturing the same

FUKAMI SHUNSUKE

Magnetic memory device and magnetic random access memory

Magnetic random access memory, write method therefor, and magnetoresistance effect element

Magnetoresistive element, and magnetic random access memory

Magnetic random access memory

Magnetoresistance effect element and magnetic random access memory

Semiconductor device

Magnetic memory device and magnetic memory

Magnetic memory element, magnetic memory and initializing method

Magnetic random access memory

Magnetic memory element and magnetic memory

Magnetic memory element, magnetic memory and manufacturing method of magnetic memory

Magnetic memory and method of manufacturing the same

Method of initializing magnetic memory element

SUZUKI TETSUHIRO

Magnetic memory using spin orbit interaction

Non-volatile logic circuit

Magnetic random access memory and initializing method for the same

MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region

Magnetic random access memory and initializing method for the same

Magnetoresistance element, MRAM, and initialization method for magnetoresistance element

RENESAS ELECTRONICS CORP

Magnetic memory using spin orbit interaction

Semiconductor device

Magnetic body device and manufacturing method thereof

Semiconductor package

Magnetic shield, semiconductor device, and semiconductor package

NAGAHARA KIYOKAZU

Magnetic memory element and magnetic random access memory

Magnetic random access memory and method of manufacturing the same

SONY SEMICONDUCTOR SOLUTIONS CORP

Magnetic tunnel junction element and semiconductor device

Image sensor and imaging device

SUGIBAYASHI TADAHIKO

Magnetoresistive effect element and magnetic random access memory using the same

KARIYADA EIJI

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

ISHIWATA NOBUYUKI

Magnetic memory element and magnetic memory

HONJOU HIROAKI

Magnetic random access memory and method of manufacturing the same

SONY CORP

Storage device, information processing apparatus, and storage device control method