Inventor
OHSHIMA NORIKAZU
JP32 patents
⚠️ This page may combine multiple inventors who share the name “OHSHIMA NORIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUKAMI SHUNSUKE
12 patentsUS8559214B2Oct 15, 2013
Magnetic memory device and magnetic random access memory
FUKAMI SHUNSUKE12 citations84
US8194436B2Jun 5, 2012
Magnetic random access memory, write method therefor, and magnetoresistance effect element
FUKAMI SHUNSUKE8 citations84
US8174086B2May 8, 2012
Magnetoresistive element, and magnetic random access memory
FUKAMI SHUNSUKE8 citations84
US8159872B2Apr 17, 2012
Magnetic random access memory
FUKAMI SHUNSUKE8 citations84
US8154913B2Apr 10, 2012
Magnetoresistance effect element and magnetic random access memory
FUKAMI SHUNSUKE11 citations84
US8120950B2Feb 21, 2012
Semiconductor device
FUKAMI SHUNSUKE10 citations84
US8791534B2Jul 29, 2014
Magnetic memory device and magnetic memory
FUKAMI SHUNSUKE4 citations73
US8592930B2Nov 26, 2013
Magnetic memory element, magnetic memory and initializing method
FUKAMI SHUNSUKE4 citations63
US8149615B2Apr 3, 2012
Magnetic random access memory
FUKAMI SHUNSUKE4 citations63
US8994130B2Mar 31, 2015
Magnetic memory element and magnetic memory
FUKAMI SHUNSUKE1 citations52
US8787076B2Jul 22, 2014
Magnetic memory and method of manufacturing the same
FUKAMI SHUNSUKE1 citations52
US8565011B2Oct 22, 2013
Method of initializing magnetic memory element
FUKAMI SHUNSUKE1 citations52
NEC CORP
6 patentsUS8379429B2Feb 19, 2013
Domain wall motion element and magnetic random access memory
NEC CORP20 citations92
US8040724B2Oct 18, 2011
Magnetic domain wall random access memory
NEC CORP22 citations92
US7929342B2Apr 19, 2011
Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
NEC CORP29 citations92
US8351249B2Jan 8, 2013
Magnetic random access memory
NEC CORP6 citations84
US8363461B2Jan 29, 2013
Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory
NEC CORP5 citations73
US8923042B2Dec 30, 2014
Magnetic random access memory
NEC CORP3 citations63
SUZUKI TETSUHIRO
3 patentsUS8174873B2May 8, 2012
Magnetic random access memory and initializing method for the same
SUZUKI TETSUHIRO11 citations83
US8238135B2Aug 7, 2012
MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region
SUZUKI TETSUHIRO2 citations62
US8537604B2Sep 17, 2013
Magnetoresistance element, MRAM, and initialization method for magnetoresistance element
SUZUKI TETSUHIRO0 citations51