Inventor

HUANG JIUN-JIA

TW26 patents

⚠️ This page may combine multiple inventors who share the name “HUANG JIUN-JIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG JIUN-JIA

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of forming high performance MOSFETs having varying channel structures

Integrate circuit with nanowires

Tuning tensile strain on FinFET

Method of forming a Fin structure of semiconductor device

High performance MOSFETs having varying channel structures

High performance MOSFETs having different device characteristics

Tuning tensile strain on FinFET

Tuning tensile strain on FinFET

FinFET device and method of fabricating same

Semiconductor device and manufacturing method thereof

Tuning tensile strain on FinFET

Isolation circuit between power domains

Semiconductor device and manufacturing method thereof

Isolation circuit between power domains

Semiconductor device and manufacturing method thereof

Isolation circuit between power domains

Semiconductor device and manufacturing method thereof

Forming gate stacks of FinFETs through oxidation

Method of forming a fin structure of semiconductor device

Method of forming fin structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG

Fin structure of semiconductor device

Integrate circuit with nanowires

FinFETs with gradient germanium-containing channels

Tuning tensile strain on FinFET

Integrate circuit with nanowires

Integrate circuit with nanowires