P

Inventor

SAULNIER NICOLE A

US32 patents
⚠️ This page may combine multiple inventors who share the name “SAULNIER NICOLE A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

24 patents
US9934970B1Apr 3, 2018

Self aligned pattern formation post spacer etchback in tight pitch configurations

IBM22 citations94
US9991156B2Jun 5, 2018

Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs

IBM15 citations93
US10529569B2Jan 7, 2020

Self aligned pattern formation post spacer etchback in tight pitch configurations

IBM5 citations84
US9779944B1Oct 3, 2017

Method and structure for cut material selection

IBM17 citations84
US9607886B1Mar 28, 2017

Self aligned conductive lines with relaxed overlay

IBM6 citations84
US10229854B1Mar 12, 2019

FinFET gate cut after dummy gate removal

IBM11 citations83
US10957583B2Mar 23, 2021

Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs

IBM1 citations73
US10546774B2Jan 28, 2020

Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs

IBM3 citations73
US10515894B2Dec 24, 2019

Enhanced self-alignment of vias for a semiconductor device

IBM2 citations73
US10121661B2Nov 6, 2018

Self aligned pattern formation post spacer etchback in tight pitch configurations

IBM2 citations73
US9786554B1Oct 10, 2017

Self aligned conductive lines

IBM5 citations73
US10249533B1Apr 2, 2019

Method and structure for forming a replacement contact

IBM6 citations71
US9711507B1Jul 18, 2017

Separate N and P fin etching for reduced CMOS device leakage

IBM3 citations71
US9659820B2May 23, 2017

Interconnect structure having large self-aligned vias

IBM3 citations71
US11022891B2Jun 1, 2021

Photoresist bridging defect removal by reverse tone weak developer

IBM0 citations62
US11022890B2Jun 1, 2021

Photoresist bridging defect removal by reverse tone weak developer

IBM0 citations62
US10211151B2Feb 19, 2019

Enhanced self-alignment of vias for asemiconductor device

IBM1 citations62
US11043494B2Jun 22, 2021

Structure and method for equal substrate to channel height between N and P fin-FETs

IBM0 citations60
US10395985B2Aug 27, 2019

Self aligned conductive lines with relaxed overlay

IBM0 citations52
US10083864B2Sep 25, 2018

Self aligned conductive lines with relaxed overlay

IBM0 citations52
US9911647B2Mar 6, 2018

Self aligned conductive lines

IBM1 citations52
US10361127B1Jul 23, 2019

Vertical transport FET with two or more gate lengths

IBM0 citations51
US10229910B2Mar 12, 2019

Separate N and P fin etching for reduced CMOS device leakage

IBM0 citations51
US10381348B2Aug 13, 2019

Structure and method for equal substrate to channel height between N and P fin-FETs

IBM0 citations50

TESSERA INC

3 patents

ST MICROELECTRONICS INC

2 patents

TESSERA LLC

2 patents

ADEIA SEMICONDUCTOR SOLUTIONS LLC

1 patent