Inventor
SAULNIER NICOLE A
US32 patents
⚠️ This page may combine multiple inventors who share the name “SAULNIER NICOLE A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
24 patentsUS9934970B1Apr 3, 2018
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM22 citations94
US9991156B2Jun 5, 2018
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
IBM15 citations93
US10529569B2Jan 7, 2020
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM5 citations84
US9779944B1Oct 3, 2017
Method and structure for cut material selection
IBM17 citations84
US9607886B1Mar 28, 2017
Self aligned conductive lines with relaxed overlay
IBM6 citations84
US10229854B1Mar 12, 2019
FinFET gate cut after dummy gate removal
IBM11 citations83
US10957583B2Mar 23, 2021
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
IBM1 citations73
US10546774B2Jan 28, 2020
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
IBM3 citations73
US10515894B2Dec 24, 2019
Enhanced self-alignment of vias for a semiconductor device
IBM2 citations73
US10121661B2Nov 6, 2018
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM2 citations73
US9786554B1Oct 10, 2017
Self aligned conductive lines
IBM5 citations73
US10249533B1Apr 2, 2019
Method and structure for forming a replacement contact
IBM6 citations71
US9711507B1Jul 18, 2017
Separate N and P fin etching for reduced CMOS device leakage
IBM3 citations71
US9659820B2May 23, 2017
Interconnect structure having large self-aligned vias
IBM3 citations71
US11022891B2Jun 1, 2021
Photoresist bridging defect removal by reverse tone weak developer
IBM0 citations62
US11022890B2Jun 1, 2021
Photoresist bridging defect removal by reverse tone weak developer
IBM0 citations62
US10211151B2Feb 19, 2019
Enhanced self-alignment of vias for asemiconductor device
IBM1 citations62
US11043494B2Jun 22, 2021
Structure and method for equal substrate to channel height between N and P fin-FETs
IBM0 citations60
US10395985B2Aug 27, 2019
Self aligned conductive lines with relaxed overlay
IBM0 citations52
US10083864B2Sep 25, 2018
Self aligned conductive lines with relaxed overlay
IBM0 citations52
US9911647B2Mar 6, 2018
Self aligned conductive lines
IBM1 citations52
US10361127B1Jul 23, 2019
Vertical transport FET with two or more gate lengths
IBM0 citations51
US10229910B2Mar 12, 2019
Separate N and P fin etching for reduced CMOS device leakage
IBM0 citations51
US10381348B2Aug 13, 2019
Structure and method for equal substrate to channel height between N and P fin-FETs
IBM0 citations50
TESSERA INC
3 patentsUS11024715B2Jun 1, 2021
FinFET gate cut after dummy gate removal
TESSERA INC1 citations72
US11018007B2May 25, 2021
Self aligned pattern formation post spacer etchback in tight pitch configurations
TESSERA INC0 citations62
US10600868B2Mar 24, 2020
FinFET gate cut after dummy gate removal
TESSERA INC0 citations51