P

Inventor

COHEN GUY M

US171 patents
⚠️ This page may combine multiple inventors who share the name “COHEN GUY M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

35 patents
US7446025B2Nov 4, 2008

Method of forming vertical FET with nanowire channels and a silicided bottom contact

IBM155 citations99
US6365465B1Apr 2, 2002

Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques

IBM169 citations99
US7125785B2Oct 24, 2006

Mixed orientation and mixed material semiconductor-on-insulator wafer

IBM102 citations98
US6642115B1Nov 4, 2003

Double-gate FET with planarized surfaces and self-aligned silicides

IBM85 citations98
US6475072B1Nov 5, 2002

Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)

IBM86 citations97
US7101762B2Sep 5, 2006

Self-aligned double gate mosfet with separate gates

IBM54 citations96
US7033927B2Apr 25, 2006

Apparatus and method for thermal isolation, circuit cooling and electromagnetic shielding of a wafer

IBM76 citations96
US9287360B1Mar 15, 2016

III-V nanowire FET with compositionally-graded channel and wide-bandgap core

IBM22 citations93
US9093507B2Jul 28, 2015

Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates

IBM15 citations93
US8384065B2Feb 26, 2013

Gate-all-around nanowire field effect transistors

IBM34 citations93
US7902540B2Mar 8, 2011

Fast P-I-N photodetector with high responsitivity

IBM32 citations93
US7749905B2Jul 6, 2010

Vertical Fet with nanowire channels and a silicided bottom contact

IBM23 citations93
US7572300B2Aug 11, 2009

Monolithic high aspect ratio nano-size scanning probe microscope (SPM) tip formed by nanowire growth

IBM26 citations93
US7084460B2Aug 1, 2006

Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates

IBM20 citations93
US6982460B1Jan 3, 2006

Self-aligned gate MOSFET with separate gates

IBM37 citations93
US6967377B2Nov 22, 2005

Double-gate fet with planarized surfaces and self-aligned silicides

IBM15 citations93
US6448131B1Sep 10, 2002

Method for increasing the capacitance of a trench capacitor

IBM48 citations93
US7999251B2Aug 16, 2011

Nanowire MOSFET with doped epitaxial contacts for source and drain

IBM22 citations92
US6946696B2Sep 20, 2005

Self-aligned isolation double-gate FET

IBM29 citations92
US6759710B2Jul 6, 2004

Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques

IBM28 citations92
US6444578B1Sep 3, 2002

Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices

IBM50 citations92
US10784313B1Sep 22, 2020

Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM

IBM12 citations86
US10520723B2Dec 31, 2019

Ultra-sonic self-cleaning system

IBM4 citations84
US10228704B2Mar 12, 2019

Unmanned vehicle for servicing equipment

IBM11 citations84
US10183084B2Jan 22, 2019

Automatic eradication of bio-related contaminants from handles

IBM10 citations84
US9684804B2Jun 20, 2017

Protecting content displayed on a mobile device

IBM6 citations84
US9583567B2Feb 28, 2017

III-V gate-all-around field effect transistor using aspect ratio trapping

IBM5 citations84
US9449820B2Sep 20, 2016

Epitaxial growth techniques for reducing nanowire dimension and pitch

IBM7 citations84
US9443102B2Sep 13, 2016

Protecting content displayed on a mobile device

IBM4 citations84
US9263260B1Feb 16, 2016

Nanowire field effect transistor with inner and outer gates

IBM10 citations84
US8872274B2Oct 28, 2014

Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain

IBM8 citations84
US8723233B2May 13, 2014

CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins

IBM5 citations84
US7259049B2Aug 21, 2007

Self-aligned isolation double-gate FET

IBM11 citations84
US6972247B2Dec 6, 2005

Method of fabricating strained Si SOI wafers

IBM15 citations84
US11430510B2Aug 30, 2022

Multi-level ferroelectric field-effect transistor devices

IBM6 citations75

BANGSARUNTIP SARUNYA

8 patents

COHEN GUY M

5 patents

GLOBALFOUNDRIES INC

1 patent

DIMITRAKOPOULOS CHRISTOS D

1 patent

Showing the top 50 of 171 patents by PatentIndex Score.