Inventor
COHEN GUY M
US171 patents
⚠️ This page may combine multiple inventors who share the name “COHEN GUY M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
35 patentsUS7446025B2Nov 4, 2008
Method of forming vertical FET with nanowire channels and a silicided bottom contact
IBM155 citations99
US6365465B1Apr 2, 2002
Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
IBM169 citations99
US7125785B2Oct 24, 2006
Mixed orientation and mixed material semiconductor-on-insulator wafer
IBM102 citations98
US6642115B1Nov 4, 2003
Double-gate FET with planarized surfaces and self-aligned silicides
IBM85 citations98
US6475072B1Nov 5, 2002
Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)
IBM86 citations97
US7101762B2Sep 5, 2006
Self-aligned double gate mosfet with separate gates
IBM54 citations96
US7033927B2Apr 25, 2006
Apparatus and method for thermal isolation, circuit cooling and electromagnetic shielding of a wafer
IBM76 citations96
US9287360B1Mar 15, 2016
III-V nanowire FET with compositionally-graded channel and wide-bandgap core
IBM22 citations93
US9093507B2Jul 28, 2015
Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
IBM15 citations93
US8384065B2Feb 26, 2013
Gate-all-around nanowire field effect transistors
IBM34 citations93
US7902540B2Mar 8, 2011
Fast P-I-N photodetector with high responsitivity
IBM32 citations93
US7749905B2Jul 6, 2010
Vertical Fet with nanowire channels and a silicided bottom contact
IBM23 citations93
US7572300B2Aug 11, 2009
Monolithic high aspect ratio nano-size scanning probe microscope (SPM) tip formed by nanowire growth
IBM26 citations93
US7084460B2Aug 1, 2006
Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
IBM20 citations93
US6982460B1Jan 3, 2006
Self-aligned gate MOSFET with separate gates
IBM37 citations93
US6967377B2Nov 22, 2005
Double-gate fet with planarized surfaces and self-aligned silicides
IBM15 citations93
US6448131B1Sep 10, 2002
Method for increasing the capacitance of a trench capacitor
IBM48 citations93
US7999251B2Aug 16, 2011
Nanowire MOSFET with doped epitaxial contacts for source and drain
IBM22 citations92
US6946696B2Sep 20, 2005
Self-aligned isolation double-gate FET
IBM29 citations92
US6759710B2Jul 6, 2004
Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
IBM28 citations92
US6444578B1Sep 3, 2002
Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices
IBM50 citations92
US10784313B1Sep 22, 2020
Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM
IBM12 citations86
US10520723B2Dec 31, 2019
Ultra-sonic self-cleaning system
IBM4 citations84
US10228704B2Mar 12, 2019
Unmanned vehicle for servicing equipment
IBM11 citations84
US10183084B2Jan 22, 2019
Automatic eradication of bio-related contaminants from handles
IBM10 citations84
US9684804B2Jun 20, 2017
Protecting content displayed on a mobile device
IBM6 citations84
US9583567B2Feb 28, 2017
III-V gate-all-around field effect transistor using aspect ratio trapping
IBM5 citations84
US9449820B2Sep 20, 2016
Epitaxial growth techniques for reducing nanowire dimension and pitch
IBM7 citations84
US9443102B2Sep 13, 2016
Protecting content displayed on a mobile device
IBM4 citations84
US9263260B1Feb 16, 2016
Nanowire field effect transistor with inner and outer gates
IBM10 citations84
US8872274B2Oct 28, 2014
Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain
IBM8 citations84
US8723233B2May 13, 2014
CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins
IBM5 citations84
US7259049B2Aug 21, 2007
Self-aligned isolation double-gate FET
IBM11 citations84
US6972247B2Dec 6, 2005
Method of fabricating strained Si SOI wafers
IBM15 citations84
US11430510B2Aug 30, 2022
Multi-level ferroelectric field-effect transistor devices
IBM6 citations75
BANGSARUNTIP SARUNYA
8 patentsUS8586966B2Nov 19, 2013
Contacts for nanowire field effect transistors
BANGSARUNTIP SARUNYA19 citations93
US8455334B2Jun 4, 2013
Planar and nanowire field effect transistors
BANGSARUNTIP SARUNYA19 citations93
US8097515B2Jan 17, 2012
Self-aligned contacts for nanowire field effect transistors
BANGSARUNTIP SARUNYA36 citations93
US8921825B2Dec 30, 2014
Nanowire field effect transistor device
BANGSARUNTIP SARUNYA6 citations84
US8685823B2Apr 1, 2014
Nanowire field effect transistor device
BANGSARUNTIP SARUNYA6 citations84
US8536563B2Sep 17, 2013
Nanowire field effect transistors
BANGSARUNTIP SARUNYA5 citations84
US8519479B2Aug 27, 2013
Generation of multiple diameter nanowire field effect transistors
BANGSARUNTIP SARUNYA5 citations84
US8129247B2Mar 6, 2012
Omega shaped nanowire field effect transistors
BANGSARUNTIP SARUNYA12 citations84
COHEN GUY M
5 patentsUS8642403B1Feb 4, 2014
Replacement contacts for all-around contacts
COHEN GUY M16 citations92
US8692229B2Apr 8, 2014
Replacement contacts for all-around contacts
COHEN GUY M12 citations84
US8574969B2Nov 5, 2013
CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins
COHEN GUY M11 citations84
US8241970B2Aug 14, 2012
CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins
COHEN GUY M8 citations84
US8119434B2Feb 21, 2012
Fast p-i-n photodetector with high responsitivity
COHEN GUY M8 citations84
GLOBALFOUNDRIES INC
1 patentDIMITRAKOPOULOS CHRISTOS D
1 patentShowing the top 50 of 171 patents by PatentIndex Score.