Inventor

KARPOV ELIJAH V

US83 patents

⚠️ This page may combine multiple inventors who share the name “KARPOV ELIJAH V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KARPOV ELIJAH V

INTEL CORP

Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer

Techniques for forming non-planar resistive memory cells

Hybrid phase field effect transistor

Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices

Hybrid phase field effect transistor

Strained thin film transistors

Three-dimensional oscillator structure

Double selector element for low voltage bipolar memory devices

Thin film transistors having relatively increased width and shared bitlines

Multilayer selector device with low holding voltage

Temperature management of electronic circuitry of electronic devices, memory devices, and computing devices

Heterojunction TFETs employing an oxide semiconductor

RRAM devices and their methods of fabrication

High retention resistive random access memory

Rare earth metal and metal oxide electrode interfacing of oxide memory element in resistive random access memory cell

Stackable thin film memory

Oxide-based three-terminal resistive switching logic devices

High stability spintronic memory

High stability spintronic memory

Transistors with ferroelectric gates

Double-gated ferroelectric field-effect transistor

Thin film tunnel field effect transistors having relatively increased width

Three-dimensional oscillator structure

1S-1T ferroelectric memory

Double selector element for low voltage bipolar memory devices

Selector element with ballast for low voltage bipolar memory devices

Metal filament memory cells

Selector devices with integrated barrier materials

Thin film based 1T-1R cell with resistive random access memory below a bitline

Independently scaling selector and memory in memory cell

Selector devices

Word line with air-gap for non-volatile memories

Thin film tunnel field effect transistors having relatively increased width

Double-gated ferroelectric field-effect transistor

1S-1T ferroelectric memory

1S-1C DRAM with a non-volatile CBRAM element

KARPOV ELIJAH V

Method and apparatus to reset a phase change memory and switch (PCMS) memory cell

Low voltage embedded memory having cationic-based conductive oxide element

Drift management in a phase change memory and switch (PCMS) memory device

Conductive oxide random access memory (CORAM) cell and method of fabricating same

Low power phase change memory cell

Thermal isolation in memory cells

DOYLE BRIAN S

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same

CHANG KUO-WEI

Phase change memory including ovonic threshold switch with layered electrode and methods for forming same

MICRON TECHNOLOGY INC

Phase change memory including ovonic threshold switch with layered electrode and methods for forming the same

MAJHI PRASHANT

Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

MUKHERJEE NILOY

Resistive memory cells and precursors thereof, methods of making the same, and devices including the same

KUO CHARLES

Selector for low voltage embedded memory