Inventor

CHUNG HUA

US144 patents

⚠️ This page may combine multiple inventors who share the name “CHUNG HUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUNG HUA

APPLIED MATERIALS INC

Method of selective silicon germanium epitaxy at low temperatures

Apparatus for hybrid chemical processing

Atomic layer deposition of tantalum based barrier materials

Apparatus and method for hybrid chemical processing

Cyclical deposition of refractory metal silicon nitride

Titanium tantalum nitride silicide layer

Gas delivery apparatus and method for atomic layer deposition

Method and apparatus of generating PDMAT precursor

Method of film deposition using activated precursor gases

Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques

Method to grow thin epitaxial films at low temperature

Gas delivery apparatus for atomic layer deposition

Atomic layer deposition of barrier materials

Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Apparatus and method for hybrid chemical processing

Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Integration of ALD tantalum nitride for copper metallization

Formation of composite tungsten films

Method and apparatus for monitoring solid precursor delivery

Lid assembly for a processing system to facilitate sequential deposition techniques

Methods for depositing tungsten layers employing atomic layer deposition techniques

Method for forming tungsten materials during vapor deposition processes

Method for forming tungsten materials during vapor deposition processes

Methods for depositing tungsten layers employing atomic layer deposition techniques

Method and apparatus of generating PDMAT precursor

Method for forming tungsten materials during vapor deposition processes

Method and system for controlling the presence of fluorine in refractory metal layers

Atomic layer deposition apparatus

Method and system for controlling the presence of fluorine in refractory metal layers

Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor

Selective deposition of a barrier layer on a dielectric material

Integration of barrier layer and seed layer

Method and system for controlling the presence of fluorine in refractory metal layers

System and method to form a composite film stack utilizing sequential deposition techniques

Formation of composite tungsten films

Method for depositing refractory metal layers employing sequential deposition techniques

Selective process for source and drain formation

Self aligned replacement fin formation

Method for forming tungsten materials during vapor deposition processes

Gas delivery apparatus for atomic layer deposition

Selective ruthenium deposition on copper materials

Gas delivery apparatus for atomic layer deposition

Chemical precursor ampoule for vapor deposition processes

Method and apparatus for generating a precursor for a semiconductor processing system

Formation of composite tungsten films

Reduction of copper dewetting by transition metal deposition

Integration of ALD/CVD barriers with porous low k materials

CHEN LING

Gas delivery apparatus and method for atomic layer deposition

Apparatus and method for hybrid chemical processing

MATTSON TECH INC

Surface treatment of carbon containing films using organic radicals