Method and apparatus of generating PDMAT precursor

Abstract

A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.

What is claimed is: 
     
       1. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising:
 a canister having a sidewall, a top, and a bottom forming an interior volume; 
 an inlet port and an outlet port in fluid communication with the interior volume; 
 a plurality of baffles within the interior volume; and 
 a heater coupled to the canister, wherein the plurality of baffles form an extended mean flow path between the inlet port and the outlet port. 
 
     
     
       2. The apparatus of  claim 1 , wherein the plurality of baffles are coupled to the top of the canister. 
     
     
       3. The apparatus of  claim 1 , wherein the plurality of baffles are coupled to the bottom of the canister. 
     
     
       4. The apparatus of  claim 1 , wherein the heater is disposed proximate the sidewall of the canister. 
     
     
       5. The apparatus of  claim 1 , wherein the heater is disposed proximate the sidewall, the top, and the bottom of the canister. 
     
     
       6. The apparatus of  claim 1 , wherein the canister comprises a heat transfer medium within the interior volume. 
     
     
       7. The apparatus of  claim 6 , wherein the heat transfer medium is at least one of the plurality of baffles. 
     
     
       8. The apparatus of  claim 6 , wherein the heat transfer medium is a plurality of solid particles at least partially filling the interior volume. 
     
     
       9. The apparatus of  claim 8 , wherein the plurality of solid particles are selected from aluminum nitride, boron nitride, or combinations thereof. 
     
     
       10. The apparatus of  claim 6 , wherein the heat transfer medium is a liquid. 
     
     
       11. The apparatus of  claim 1 , further comprising a precursor material at least partially filling the canister. 
     
     
       12. The apparatus of  claim 11 , wherein the precursor material is pentakis(dimethylamido) tantalum. 
     
     
       13. The apparatus of  claim 1 , further comprising an oil trap coupled to the outlet port. 
     
     
       14. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising:
 a canister having an interior volume; 
 a precursor material and a plurality of solid particles at least partially filling the interior volume; and 
 a heater coupled to the canister, wherein the plurality of solid particles are in communication with the heater and the precursor material. 
 
     
     
       15. The apparatus of  claim 14 , wherein the precursor material is pentakis(dimethylamido) tantalum. 
     
     
       16. The apparatus of  claim 14 , wherein the canister further comprises:
 a top, a bottom, and sidewalls; 
 an inlet port and an outlet port in fluid communication with the interior volume; and 
 a plurality of baffles within the interior region. 
 
     
     
       17. The apparatus of  claim 16 , wherein the baffles are coupled to the top of the canister. 
     
     
       18. The apparatus of  claim 16 , wherein the baffles are coupled to the bottom of the canister. 
     
     
       19. The apparatus of  claim 16 , wherein the inlet port further comprises an inlet tube adapted to direct the flow of a carrier gas away from the precursor material and the plurality of solid particles. 
     
     
       20. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising:
 a canister having a sidewall, a top, and a bottom forming an interior volume; 
 an inlet port and an outlet port in fluid communication with the interior volume; and 
 a plurality of baffles extending from the bottom of the canister within the interior volume, wherein the baffles form an extended mean flow path between the inlet port and the outlet port.