Inventor · disambiguated record
Hua Chung
Also filed as: CHUNG HUA · CHUNG HUA-TING
145 granted patents·60 pending applications·6,099 citations·filing 1998–2025
99Inventor score
Files withAPPLIED MATERIALS INC130MATTSON TECH INC36CHEN LING6CHUNG HUA4BEIJING E TOWN SEMICONDUCTOR TECH CO LTD2
Top patents by PatentIndex Score
205 records- 0199US11018003B2Method of selective silicon germanium epitaxy at low temperaturesAPPLIED MATERIALS INC·Filed 2019·Granted May 25, 2021·312 cites·21 claims
- 0299US6551929B1Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·396 cites·60 claims
- 0398US9929055B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2016·Granted Mar 27, 2018·313 cites·20 claims
- 0498US7591907B2Apparatus for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2008·Granted Sep 22, 2009·375 cites·20 claims
- 0598US7465666B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·47 cites·33 claims
- 0698US7402210B2Apparatus and method for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2007·Granted Jul 22, 2008·61 cites·13 claims
- 0798US7270709B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2005·Granted Sep 18, 2007·50 cites·20 claims
- 0898US7241686B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2005·Granted Jul 10, 2007·89 cites·31 claims
- 0998US7235486B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 26, 2007·43 cites·39 claims
- 1098US7204886B2Apparatus and method for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2003·Granted Apr 17, 2007·525 cites·20 claims
- 1198US7049226B2Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·514 cites·55 claims
- 1298US6916398B2Gas delivery apparatus and method for atomic layer depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 12, 2005·646 cites·21 claims
- 1398US6905541B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·119 cites·32 claims
- 1497US11495437B2Surface pretreatment process to improve quality of oxide films produced by remote plasmaMATTSON TECH INC·Filed 2020·Granted Nov 8, 2022·4 cites·20 claims
- 1597US10269574B1Surface treatment of carbon containing films using organic radicalsMATTSON TECH INC·Filed 2018·Granted Apr 23, 2019·12 cites·25 claims
- 1697US9923081B1Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 20, 2018·23 cites·20 claims
- 1797US8070879B2Apparatus and method for hybrid chemical processingCHEN LING·Filed 2009·Granted Dec 6, 2011·29 cites·11 claims
- 1897US7674715B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 9, 2010·35 cites·25 claims
- 1997US7595263B2Atomic layer deposition of barrier materialsAPPLIED MATERIALS INC·Filed 2007·Granted Sep 29, 2009·68 cites·42 claims
- 2097US7524762B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2007·Granted Apr 28, 2009·61 cites·26 claims
- 2197US7405158B2Methods for depositing tungsten layers employing atomic layer deposition techniquesAPPLIED MATERIALS INC·Filed 2005·Granted Jul 29, 2008·105 cites·29 claims
- 2297US7265048B2Reduction of copper dewetting by transition metal depositionAPPLIED MATERIALS INC·Filed 2005·Granted Sep 4, 2007·47 cites·33 claims
- 2397US7115494B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·30 cites·54 claims
- 2497US7041335B2Titanium tantalum nitride silicide layerAPPLIED MATERIALS INC·Filed 2003·Granted May 9, 2006·152 cites·78 claims
- 2597US6838125B2Method of film deposition using activated precursor gasesAPPLIED MATERIALS INC·Filed 2002·Granted Jan 4, 2005·197 cites·24 claims
- 2697US6772072B2Method and apparatus for monitoring solid precursor deliveryAPPLIED MATERIALS INC·Filed 2002·Granted Aug 3, 2004·127 cites·35 claims
- 2796US11043393B2Ozone treatment for selective silicon nitride etch over siliconMATTSON TECH INC·Filed 2020·Granted Jun 22, 2021·5 cites·20 claims
- 2896US9209279B1Self aligned replacement fin formationAPPLIED MATERIALS INC·Filed 2014·Granted Dec 8, 2015·20 cites·11 claims
- 2996US8668776B2Gas delivery apparatus and method for atomic layer depositionCHEN LING·Filed 2010·Granted Mar 11, 2014·21 cites·14 claims
- 3096US7846840B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2009·Granted Dec 7, 2010·19 cites·22 claims
- 3196US7745333B2Methods for depositing tungsten layers employing atomic layer deposition techniquesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·47 cites·15 claims
- 3296US7699023B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2007·Granted Apr 20, 2010·34 cites·20 claims
- 3396US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 3496US7597758B2Chemical precursor ampoule for vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·20 claims
- 3596US7211508B2Atomic layer deposition of tantalum based barrier materialsAPPLIED MATERIALS INC·Filed 2004·Granted May 1, 2007·139 cites·25 claims
- 3696US7081271B2Cyclical deposition of refractory metal silicon nitrideAPPLIED MATERIALS INC·Filed 2002·Granted Jul 25, 2006·124 cites·57 claims
- 3796US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 3896US6660126B2Lid assembly for a processing system to facilitate sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·128 cites·28 claims
- 3995US6972267B2Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursorAPPLIED MATERIALS INC·Filed 2003·Granted Dec 6, 2005·63 cites·20 claims
- 4095US6855368B1Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2000·Granted Feb 15, 2005·58 cites·15 claims
- 4195US6797340B2Method for depositing refractory metal layers employing sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 28, 2004·167 cites·20 claims
- 4294US10804109B2Surface treatment of silicon and carbon containing films by remote plasma with organic precursorsMATTSON TECH INC·Filed 2018·Granted Oct 13, 2020·6 cites·27 claims
- 4394US7085616B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2001·Granted Aug 1, 2006·42 cites·39 claims
- 4493US11062910B2Surface treatment of silicon or silicon germanium surfaces using organic radicalsMATTSON TECH INC·Filed 2019·Granted Jul 13, 2021·4 cites·18 claims
- 4593US10403492B1Integration of materials removal and surface treatment in semiconductor device fabricationMATTSON TECH INC·Filed 2018·Granted Sep 3, 2019·8 cites·19 claims
- 4693US7780785B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2002·Granted Aug 24, 2010·61 cites·26 claims
- 4793US7780788B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Aug 24, 2010·17 cites·62 claims
- 4893US7422637B2Processing chamber configured for uniform gas flowAPPLIED MATERIALS INC·Filed 2006·Granted Sep 9, 2008·14 cites·19 claims
- 4993US6936906B2Integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2001·Granted Aug 30, 2005·56 cites·31 claims
- 5092US10950416B2Chamber seasoning to improve etch uniformity by reducing chemistryMATTSON TECH INC·Filed 2019·Granted Mar 16, 2021·5 cites·18 claims
Showing the top 50 of 205 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hua Chung files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →