Inventor · disambiguated record
Christophe Marcadal
Also filed as: MARCADAL CHRISTOPHE
37 granted patents·11 pending applications·2,526 citations·filing 1998–2025
98Inventor score
Top patents by PatentIndex Score
48 records- 0198US7270709B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2005·Granted Sep 18, 2007·50 cites·20 claims
- 0298US7241686B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2005·Granted Jul 10, 2007·89 cites·31 claims
- 0398US6905541B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·119 cites·32 claims
- 0498US6607976B2Copper interconnect barrier layer structure and formation methodAPPLIED MATERIALS INC·Filed 2001·Granted Aug 19, 2003·289 cites·14 claims
- 0598US6498091B1Method of using a barrier sputter reactor to remove an underlying barrier layerAPPLIED MATERIALS INC·Filed 2000·Granted Dec 24, 2002·626 cites·31 claims
- 0697US7524762B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2007·Granted Apr 28, 2009·61 cites·26 claims
- 0797US7265048B2Reduction of copper dewetting by transition metal depositionAPPLIED MATERIALS INC·Filed 2005·Granted Sep 4, 2007·47 cites·33 claims
- 0897US7026238B2Reliability barrier integration for Cu applicationAPPLIED MATERIALS INC·Filed 2002·Granted Apr 11, 2006·99 cites·21 claims
- 0997US6660622B2Process for removing an underlying layer and depositing a barrier layer in one reactorAPPLIED MATERIALS INC·Filed 2002·Granted Dec 9, 2003·120 cites·23 claims
- 1096US7682946B2Apparatus and process for plasma-enhanced atomic layer depositionAPPLIED MATERIALS INC·Filed 2006·Granted Mar 23, 2010·40 cites·33 claims
- 1196US7597758B2Chemical precursor ampoule for vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·20 claims
- 1296US6110530ACVD method of depositing copper films by using improved organocopper precursor blendAPPLIED MATERIALS INC·Filed 1999·Granted Aug 29, 2000·272 cites·4 claims
- 1395US7850779B2Apparatus and process for plasma-enhanced atomic layer depositionAPPLIED MATERISALS INC·Filed 2006·Granted Dec 14, 2010·69 cites·6 claims
- 1495US6953742B2Tantalum barrier layer for copper metallizationAPPLIED MATERIALS INC·Filed 2003·Granted Oct 11, 2005·79 cites·36 claims
- 1595US6562715B1Barrier layer structure for copper metallization and method of forming the structureAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·112 cites·8 claims
- 1694US7562672B2Chemical delivery apparatus for CVD or ALDAPPLIED MATERIALS INC·Filed 2006·Granted Jul 21, 2009·15 cites·16 claims
- 1793US6596643B2CVD TiSiN barrier for copper integrationAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·60 cites·20 claims
- 1893US6596085B1Methods and apparatus for improved vaporization of deposition material in a substrate processing systemAPPLIED MATERIALS INC·Filed 2000·Granted Jul 22, 2003·71 cites·6 claims
- 1991US7576002B2Multi-step barrier deposition methodAPPLIED MATERIALS INC·Filed 2005·Granted Aug 18, 2009·13 cites·44 claims
- 2089US9032906B2Apparatus and process for plasma-enhanced atomic layer depositionMA PAUL·Filed 2007·Granted May 19, 2015·13 cites·20 claims
- 2189US6958296B2CVD TiSiN barrier for copper integrationAPPLIED MATERIALS INC·Filed 2003·Granted Oct 25, 2005·40 cites·4 claims
- 2288US7521379B2Deposition and densification process for titanium nitride barrier layersAPPLIED MATERIALS INC·Filed 2007·Granted Apr 21, 2009·11 cites·9 claims
- 2388US7244683B2Integration of ALD/CVD barriers with porous low k materialsAPPLIED MATERIALS INC·Filed 2003·Granted Jul 17, 2007·42 cites·22 claims
- 2487US7833358B2Method of recovering valuable material from exhaust gas stream of a reaction chamberAPPLIED MATERIALS INC·Filed 2006·Granted Nov 16, 2010·17 cites·11 claims
- 2587US6358323B1Method and apparatus for improved control of process and purge material in a substrate processing systemAPPLIED MATERIALS INC·Filed 1998·Granted Mar 19, 2002·73 cites·18 claims
- 2684US7588736B2Apparatus and method for generating a chemical precursorAPPLIED MATERIALS INC·Filed 2006·Granted Sep 15, 2009·7 cites·51 claims
- 2783US8951478B2Ampoule with a thermally conductive coatingCHU SCHUBERT S·Filed 2007·Granted Feb 10, 2015·7 cites·19 claims
- 2883US7568495B2Chemical delivery apparatus for CVD or ALDAPPLIED MATERIALS INC·Filed 2007·Granted Aug 4, 2009·9 cites·20 claims
- 2982US7748400B2Chemical delivery apparatus for CVD or ALDAPPLIED MATERIALS INC·Filed 2009·Granted Jul 6, 2010·8 cites·25 claims
- 3082US7524374B2Method and apparatus for generating a precursor for a semiconductor processing systemAPPLIED MATERIALS INC·Filed 2004·Granted Apr 28, 2009·26 cites·45 claims
- 3179US7838441B2Deposition and densification process for titanium nitride barrier layersAPPLIED MATERIALS INC·Filed 2009·Granted Nov 23, 2010·5 cites·15 claims
- 3278US8062422B2Method and apparatus for generating a precursor for a semiconductor processing systemCHEN LING·Filed 2009·Granted Nov 22, 2011·1 cites·20 claims
- 3373US6455421B1Plasma treatment of tantalum nitride compound films formed by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·13 cites·29 claims
- 3471US7691742B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2009·Granted Apr 6, 2010·2 cites·20 claims
- 3569US7832432B2Chemical delivery apparatus for CVD or ALDAPPLIED MATERIALS INC·Filed 2009·Granted Nov 16, 2010·3 cites·25 claims
- 3668US2025285846A1Plasma preclean system for cluster toolAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3759US12334318B2Plasma preclean system for cluster toolAPPLIED MATERIALS INC·Filed 2022·Granted Jun 17, 2025·0 cites·12 claims
- 3855US8216374B2Gas coupler for substrate processing chamberHUSTON JOEL·Filed 2006·Granted Jul 10, 2012·2 cites·20 claims
- 3955US2007151861A1Reliability barrier integration for cu applicationXI MING·Filed 2007·Application pending·0 cites
- 4048US2012270384A1Apparatus for deposition of materials on a substrateSANCHEZ ERROL ANTONIO C·Filed 2011·Application pending·0 cites
- 4144US2004209460A1Reliability barrier integration for Cu applicationFiled 2004·Application pending·0 cites
- 4244US2007054487A1Atomic layer deposition processes for ruthenium materialsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4342US2019355621A1Method For Increasing The Verticality Of PillarsMICROMATERIALS LLC·Filed 2019·Application pending·0 cites
- 4441US2002192952A1Plasma treatment of tantalum nitride compound films formed by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4541US2007077750A1Atomic layer deposition processes for ruthenium materialsMA PAUL·Filed 2006·Application pending·0 cites
- 4637US2004009336A1Titanium silicon nitride (TISIN) barrier layer for copper diffusionAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4737US2002190379A1W-CVD with fluorine-free tungsten nucleationAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4836US2002142589A1Method of obtaining low temperature alpha-ta thin films using wafer biasAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →