Inventor · disambiguated record
Seshadri Ganguli
Also filed as: GANGULI SESHADRI
93 granted patents·36 pending applications·2,657 citations·filing 1998–2025
99Inventor score
Top patents by PatentIndex Score
129 records- 0198US7270709B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2005·Granted Sep 18, 2007·50 cites·20 claims
- 0298US7186385B2Apparatus for providing gas to a processing chamberAPPLIED MATERIALS INC·Filed 2002·Granted Mar 6, 2007·128 cites·38 claims
- 0398US6905541B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·119 cites·32 claims
- 0498US6607976B2Copper interconnect barrier layer structure and formation methodAPPLIED MATERIALS INC·Filed 2001·Granted Aug 19, 2003·289 cites·14 claims
- 0598US6498091B1Method of using a barrier sputter reactor to remove an underlying barrier layerAPPLIED MATERIALS INC·Filed 2000·Granted Dec 24, 2002·626 cites·31 claims
- 0697US7265048B2Reduction of copper dewetting by transition metal depositionAPPLIED MATERIALS INC·Filed 2005·Granted Sep 4, 2007·47 cites·33 claims
- 0797US6772072B2Method and apparatus for monitoring solid precursor deliveryAPPLIED MATERIALS INC·Filed 2002·Granted Aug 3, 2004·127 cites·35 claims
- 0897US6660622B2Process for removing an underlying layer and depositing a barrier layer in one reactorAPPLIED MATERIALS INC·Filed 2002·Granted Dec 9, 2003·120 cites·23 claims
- 0996US7691442B2Ruthenium or cobalt as an underlayer for tungsten film depositionAPPLIED MATERIALS INC·Filed 2008·Granted Apr 6, 2010·39 cites·25 claims
- 1096US7682946B2Apparatus and process for plasma-enhanced atomic layer depositionAPPLIED MATERIALS INC·Filed 2006·Granted Mar 23, 2010·40 cites·33 claims
- 1196US7597758B2Chemical precursor ampoule for vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·20 claims
- 1296US7569191B2Method and apparatus for providing precursor gas to a processing chamberAPPLIED MATERIALS INC·Filed 2008·Granted Aug 4, 2009·15 cites·22 claims
- 1396US7429402B2Ruthenium as an underlayer for tungsten film depositionAPPLIED MATERIALS INC·Filed 2004·Granted Sep 30, 2008·101 cites·28 claims
- 1496US6110530ACVD method of depositing copper films by using improved organocopper precursor blendAPPLIED MATERIALS INC·Filed 1999·Granted Aug 29, 2000·272 cites·4 claims
- 1595US12022650B2Low resistivity DRAM buried word line stackAPPLIED MATERIALS INC·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 1695US10358719B2Selective deposition of aluminum oxide on metal surfacesAPPLIED MATERIALS INC·Filed 2017·Granted Jul 23, 2019·5 cites·17 claims
- 1795US7850779B2Apparatus and process for plasma-enhanced atomic layer depositionAPPLIED MATERISALS INC·Filed 2006·Granted Dec 14, 2010·69 cites·6 claims
- 1895US7429361B2Method and apparatus for providing precursor gas to a processing chamberAPPLIED MATERIALS INC·Filed 2006·Granted Sep 30, 2008·23 cites·68 claims
- 1995US7264846B2Ruthenium layer formation for copper film depositionAPPLIED MATERIALS INC·Filed 2003·Granted Sep 4, 2007·87 cites·46 claims
- 2095US6953742B2Tantalum barrier layer for copper metallizationAPPLIED MATERIALS INC·Filed 2003·Granted Oct 11, 2005·79 cites·36 claims
- 2194US11680313B2Selective deposition on non-metallic surfacesAPPLIED MATERIALS INC·Filed 2020·Granted Jun 20, 2023·3 cites·18 claims
- 2294US11587936B2Low resistivity DRAM buried word line stackAPPLIED MATERIALS INC·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 2394US9048183B2NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursorsAPPLIED MATERIALS INC·Filed 2014·Granted Jun 2, 2015·14 cites·18 claims
- 2494US7562672B2Chemical delivery apparatus for CVD or ALDAPPLIED MATERIALS INC·Filed 2006·Granted Jul 21, 2009·15 cites·16 claims
- 2593US11621266B2Method of testing a gap fill for DRAMAPPLIED MATERIALS INC·Filed 2021·Granted Apr 4, 2023·2 cites·11 claims
- 2692US8187970B2Process for forming cobalt and cobalt silicide materials in tungsten contact applicationsGANGULI SESHADRI·Filed 2010·Granted May 29, 2012·12 cites·9 claims
- 2791US8563424B2Process for forming cobalt and cobalt silicide materials in tungsten contact applicationsGANGULI SESHADRI·Filed 2012·Granted Oct 22, 2013·10 cites·20 claims
- 2891US8110489B2Process for forming cobalt-containing materialsGANGULI SESHADRI·Filed 2007·Granted Feb 7, 2012·15 cites·52 claims
- 2991US7576002B2Multi-step barrier deposition methodAPPLIED MATERIALS INC·Filed 2005·Granted Aug 18, 2009·13 cites·44 claims
- 3090US8637390B2Metal gate structures and methods for forming thereofGANGULI SESHADRI·Filed 2011·Granted Jan 28, 2014·12 cites·13 claims
- 3190US8524600B2Post deposition treatments for CVD cobalt filmsLEI YU·Filed 2011·Granted Sep 3, 2013·12 cites·20 claims
- 3289US9209074B2Cobalt deposition on barrier surfacesAPPLIED MATERIALS INC·Filed 2015·Granted Dec 8, 2015·5 cites·20 claims
- 3389US9032906B2Apparatus and process for plasma-enhanced atomic layer depositionMA PAUL·Filed 2007·Granted May 19, 2015·13 cites·20 claims
- 3489US8642468B2NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursorsGANGULI SESHADRI·Filed 2011·Granted Feb 4, 2014·9 cites·17 claims
- 3588US9129945B2Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performanceLEE SANG-HYEOB·Filed 2010·Granted Sep 8, 2015·10 cites·14 claims
- 3688US7678194B2Method for providing gas to a processing chamberAPPLIED MATERIALS INC·Filed 2006·Granted Mar 16, 2010·4 cites·14 claims
- 3787US11060188B2Selective deposition of aluminum oxide on metal surfacesAPPLIED MATERIALS INC·Filed 2019·Granted Jul 13, 2021·1 cites·13 claims
- 3887US8765601B2Post deposition treatments for CVD cobalt filmsAPPLIED MATERIALS INC·Filed 2013·Granted Jul 1, 2014·6 cites·20 claims
- 3987US7833358B2Method of recovering valuable material from exhaust gas stream of a reaction chamberAPPLIED MATERIALS INC·Filed 2006·Granted Nov 16, 2010·17 cites·11 claims
- 4086US11171141B2Gap fill methods of forming buried word lines in DRAM without forming bottom voidsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 9, 2021·2 cites·20 claims
- 4186US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 4286US9145612B2Deposition of N-metal films comprising aluminum alloysAPPLIED MATERIALS INC·Filed 2013·Granted Sep 29, 2015·3 cites·18 claims
- 4385US10109534B2Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)APPLIED MATERIALS INC·Filed 2015·Granted Oct 23, 2018·5 cites·20 claims
- 4485US9230835B2Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devicesAPPLIED MATERIALS INC·Filed 2014·Granted Jan 5, 2016·6 cites·20 claims
- 4585US8927059B2Deposition of metal films using alane-based precursorsAPPLIED MATERIALS INC·Filed 2012·Granted Jan 6, 2015·6 cites·19 claims
- 4685US2024218503A1Selective cobalt deposition on copper surfacesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4784US9051641B2Cobalt deposition on barrier surfacesLU JIANG·Filed 2008·Granted Jun 9, 2015·8 cites·25 claims
- 4884US7588736B2Apparatus and method for generating a chemical precursorAPPLIED MATERIALS INC·Filed 2006·Granted Sep 15, 2009·7 cites·51 claims
- 4983US8951478B2Ampoule with a thermally conductive coatingCHU SCHUBERT S·Filed 2007·Granted Feb 10, 2015·7 cites·19 claims
- 5083US7910165B2Ruthenium layer formation for copper film depositionAPPLIED MATERIALS INC·Filed 2004·Granted Mar 22, 2011·35 cites·55 claims
Showing the top 50 of 129 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →