Inventor · disambiguated record
Mei Chang
Also filed as: CHANG MEI · CHANG MEI-ZYH
175 granted patents·23 pending applications·18,054 citations·filing 1987–2024
99Inventor score
Top patents by PatentIndex Score
198 records- 0199US9765432B2Dual-direction chemical delivery system for ALD/CVD chambersAPPLIED MATERIALS INC·Filed 2016·Granted Sep 19, 2017·362 cites·15 claims
- 0299US9353440B2Dual-direction chemical delivery system for ALD/CVD chambersAPPLIED MATERIALS INC·Filed 2013·Granted May 31, 2016·373 cites·18 claims
- 0399US6129044AApparatus for substrate processing with improved throughput and yieldAPPLIED MATERIALS INC·Filed 1999·Granted Oct 10, 2000·578 cites·21 claims
- 0499US5846332AThermally floating pedestal collar in a chemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1996·Granted Dec 8, 1998·863 cites·22 claims
- 0599US5516367AChemical vapor deposition chamber with a purge guideAPPLIED MATERIALS INC·Filed 1994·Granted May 14, 1996·397 cites·47 claims
- 0699US4854263AInlet manifold and methods for increasing gas dissociation and for PECVD of dielectric filmsAPPLIED MATERIALS INC·Filed 1987·Granted Aug 8, 1989·791 cites·11 claims
- 0798USRE47440EApparatus and method for providing uniform flow of gasAPPLIED MATERIALS INC·Filed 2017·Granted Jun 18, 2019·360 cites·31 claims
- 0898US9252024B2Deposition chambers with UV treatment and methods of useAPPLIED MATERIALS INC·Filed 2013·Granted Feb 2, 2016·469 cites·16 claims
- 0998US8633115B2Methods for atomic layer etchingCHANG MEI·Filed 2011·Granted Jan 21, 2014·522 cites·11 claims
- 1098US7939422B2Methods of thin film processAPPLIED MATERIALS INC·Filed 2007·Granted May 10, 2011·240 cites·25 claims
- 1198US7591907B2Apparatus for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2008·Granted Sep 22, 2009·375 cites·20 claims
- 1298US7520957B2Lid assembly for front end of line fabricationAPPLIED MATERIALS INC·Filed 2005·Granted Apr 21, 2009·162 cites·8 claims
- 1398US7402210B2Apparatus and method for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2007·Granted Jul 22, 2008·61 cites·13 claims
- 1498US7396480B2Method for front end of line fabricationAPPLIED MATERIALS INC·Filed 2005·Granted Jul 8, 2008·285 cites·20 claims
- 1598US7270709B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2005·Granted Sep 18, 2007·50 cites·20 claims
- 1698US7204886B2Apparatus and method for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2003·Granted Apr 17, 2007·525 cites·20 claims
- 1798US7049226B2Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·514 cites·55 claims
- 1898US6905541B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·119 cites·32 claims
- 1998US6607976B2Copper interconnect barrier layer structure and formation methodAPPLIED MATERIALS INC·Filed 2001·Granted Aug 19, 2003·289 cites·14 claims
- 2098US6171661B1Deposition of copper with increased adhesionAPPLIED MATERIALS INC·Filed 1998·Granted Jan 9, 2001·362 cites·26 claims
- 2198US6106625AReactor useful for chemical vapor deposition of titanium nitrideAPPLIED MATERIALS INC·Filed 1998·Granted Aug 22, 2000·627 cites·28 claims
- 2298US5856240AChemical vapor deposition of a thin film onto a substrateAPPLIED MATERIALS INC·Filed 1994·Granted Jan 5, 1999·275 cites·18 claims
- 2398US5851299APassive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositionsAPPLIED MATERIALS INC·Filed 1994·Granted Dec 22, 1998·402 cites·34 claims
- 2498US5213650AApparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of waferAPPLIED MATERIALS INC·Filed 1991·Granted May 25, 1993·530 cites·9 claims
- 2598US5028565AProcess for CVD deposition of tungsten layer on semiconductor waferAPPLIED MATERIALS INC·Filed 1989·Granted Jul 2, 1991·387 cites·18 claims
- 2698US4960488AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1989·Granted Oct 2, 1990·529 cites·16 claims
- 2797US8846163B2Method for removing oxidesKAO CHIEN-TEH·Filed 2012·Granted Sep 30, 2014·190 cites·19 claims
- 2897US8070879B2Apparatus and method for hybrid chemical processingCHEN LING·Filed 2009·Granted Dec 6, 2011·29 cites·11 claims
- 2997US7871926B2Methods and systems for forming at least one dielectric layerAPPLIED MATERIALS INC·Filed 2007·Granted Jan 18, 2011·77 cites·17 claims
- 3097US7026238B2Reliability barrier integration for Cu applicationAPPLIED MATERIALS INC·Filed 2002·Granted Apr 11, 2006·99 cites·21 claims
- 3197US5855687ASubstrate support shield in wafer processing reactorsAPPLIED MATERIALS INC·Filed 1994·Granted Jan 5, 1999·360 cites·11 claims
- 3297US4842683AMagnetic field-enhanced plasma etch reactorAPPLIED MATERIALS INC·Filed 1988·Granted Jun 27, 1989·410 cites·16 claims
- 3396US7699023B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2007·Granted Apr 20, 2010·34 cites·20 claims
- 3496US7691442B2Ruthenium or cobalt as an underlayer for tungsten film depositionAPPLIED MATERIALS INC·Filed 2008·Granted Apr 6, 2010·39 cites·25 claims
- 3596US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 3696US7597758B2Chemical precursor ampoule for vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·20 claims
- 3796US7429402B2Ruthenium as an underlayer for tungsten film depositionAPPLIED MATERIALS INC·Filed 2004·Granted Sep 30, 2008·101 cites·28 claims
- 3896US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 3996US6402806B1Method for unreacted precursor conversion and effluent removalAPPLIED MATERIALS INC·Filed 2000·Granted Jun 11, 2002·436 cites·34 claims
- 4096US6079356AReactor optimized for chemical vapor deposition of titaniumAPPLIED MATERIALS INC·Filed 1998·Granted Jun 27, 2000·766 cites·23 claims
- 4196US6066836AHigh temperature resistive heater for a process chamberAPPLIED MATERIALS INC·Filed 1996·Granted May 23, 2000·80 cites·38 claims
- 4296US5983906AMethods and apparatus for a cleaning process in a high temperature, corrosive, plasma environmentAPPLIED MATERIALS INC·Filed 1997·Granted Nov 16, 1999·153 cites·27 claims
- 4396US5964947ARemovable pumping channel liners within a chemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1997·Granted Oct 12, 1999·96 cites·20 claims
- 4496US5449410APlasma processing apparatusAPPLIED MATERIALS INC·Filed 1993·Granted Sep 12, 1995·123 cites·18 claims
- 4595US9230815B2Methods for depositing fluorine/carbon-free conformal tungstenAPPLIED MATERIALS INC·Filed 2013·Granted Jan 5, 2016·17 cites·20 claims
- 4695US7264846B2Ruthenium layer formation for copper film depositionAPPLIED MATERIALS INC·Filed 2003·Granted Sep 4, 2007·87 cites·46 claims
- 4795US6932871B2Multi-station deposition apparatus and methodAPPLIED MATERIALS INC·Filed 2002·Granted Aug 23, 2005·78 cites·29 claims
- 4895US6432479B2Method for in-situ, post deposition surface passivation of a chemical vapor deposited filmAPPLIED MATERIALS INC·Filed 1998·Granted Aug 13, 2002·396 cites·11 claims
- 4995US6099649AChemical vapor deposition hot-trap for unreacted precursor conversion and effluent removalAPPLIED MATERIALS INC·Filed 1997·Granted Aug 8, 2000·480 cites·18 claims
- 5094US5250467AMethod for forming low resistance and low defect density tungsten contacts to silicon semiconductor waferAPPLIED MATERIALS INC·Filed 1991·Granted Oct 5, 1993·116 cites·18 claims
Showing the top 50 of 198 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →