P

Inventor

LEE MYOUNG JAE

KR54 patents
⚠️ This page may combine multiple inventors who share the name “LEE MYOUNG JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

28 patents
US8009454B2Aug 30, 2011

Resistance random access memory device and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD67 citations98
US7602042B2Oct 13, 2009

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

SAMSUNG ELECTRONICS CO LTD26 citations92
US7521704B2Apr 21, 2009

Memory device using multi-layer with a graded resistance change

SAMSUNG ELECTRONICS CO LTD20 citations92
US7998804B2Aug 16, 2011

Nonvolatile memory device including nano dot and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7935953B2May 3, 2011

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7935952B2May 3, 2011

Non-volatile memory device having threshold switching resistor, memory array including the non-volatile memory device and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7791923B2Sep 7, 2010

Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element

SAMSUNG ELECTRONICS CO LTD11 citations84
US7759771B2Jul 20, 2010

Resistance random access memory and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7714313B2May 11, 2010

Resistive RAM having at least one varistor and methods of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7635628B2Dec 22, 2009

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7400027B2Jul 15, 2008

Nonvolatile memory device having two or more resistance elements and methods of forming and using the same

SAMSUNG ELECTRONICS CO LTD18 citations84
US7989791B2Aug 2, 2011

Diode structure and memory device including the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US7414295B2Aug 19, 2008

Transistor and method of operating transistor

SAMSUNG ELECTRONICS CO LTD8 citations74
US9570359B2Feb 14, 2017

Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US8350247B2Jan 8, 2013

Resistive random access memory having a solid solution layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations72
US8350262B2Jan 8, 2013

Nonvolatile memory device and nonvolatile memory array including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US8035095B2Oct 11, 2011

Resistive random access memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7943926B2May 17, 2011

Nonvolatile memory device and nonvolatile memory array including the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7821809B2Oct 26, 2010

Nonvolatile memory device and method including resistor and transistor

SAMSUNG ELECTRONICS CO LTD6 citations63
US7936044B2May 3, 2011

Non-volatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US7663136B2Feb 16, 2010

Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US10141407B2Nov 27, 2018

Graphene device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9379319B2Jun 28, 2016

Nonvolatile memory transistor and device including the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7872249B2Jan 18, 2011

Nonvolatile memory device and methods of operating and fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7691441B2Apr 6, 2010

Method of forming carbon fibers using metal-organic chemical vapor deposition

SAMSUNG ELECTRONICS CO LTD1 citations52
US7638361B2Dec 29, 2009

Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines

SAMSUNG ELECTRONICS CO LTD1 citations52
US9929239B2Mar 27, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US9099304B2Aug 4, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51

CHANG MAN

5 patents

SEO SUN-AE

3 patents

LEE CHANG-BUM

2 patents

LEE BYUNG-KYU

2 patents

LEE MYOUNG-JAE

2 patents

LEE DONG-SOO

2 patents

AHN SEUNG-EON

1 patent

KIM HO-JUNG

1 patent

KIM YOUNG-BAE

1 patent

DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECH

1 patent

LEE JUNG-HYUN

1 patent

KIM KI-HWAN

1 patent

Showing the top 50 of 54 patents by PatentIndex Score.