Artificial synapse device and method of manufacturing the same

Abstract

Disclosed herein is a method of manufacturing an artificial synapse device, which includes forming a first electrode on a substrate, forming a first resistance change layer on the first electrode, and forming an iridium (Ir) electrode on the first resistance change layer. In the case where an artificial synapse device is manufactured by the method of manufacturing an artificial synapse device, it is possible to enhance the reliability of the artificial synapse device by reducing the resistance distribution of the artificial synapse device manufactured by forming oxygen vacancies instead of filaments.

What is claimed is: 
     
       1. A method of manufacturing an artificial synapse device, comprising:
 forming a first electrode on a substrate; 
 forming a first resistance change layer on the first electrode; 
 forming an upper region of the first resistance change layer as a second resistance change layer by oxygen plasma treatment on the first resistance change layer; and 
 forming an iridium (Ir) electrode on the second resistance change layer by sputtering in an atmosphere of argon gas and a small amount of oxygen gas. 
 
     
     
       2. The method according to  claim 1 , wherein an artificial synapse device is supplied with oxygen ions by the small amount of oxygen gas during the formation of the iridium electrode. 
     
     
       3. The method according to  claim 1 , wherein the forming an iridium electrode is performed by mixing argon gas with oxygen gas, the partial pressure of which to be 0.1% to 5%. 
     
     
       4. The method according to  claim 1 , wherein the forming a first electrode is performed by chemical vapor deposition, thermal vacuum treatment, sputtering, or electron beam treatment. 
     
     
       5. The method according to  claim 1 , wherein the first electrode comprises platinum (Pt) or tungsten (W). 
     
     
       6. The method according to  claim 1 , wherein the forming a first resistance change layer is performed by chemical vapor deposition, thermal vacuum treatment, sputtering, or electron beam treatment. 
     
     
       7. The method according to  claim 1 , wherein the first resistance change layer comprises TiO 2 , NiO, Nb 2 O 6 , HfO 2 , Al 2 O 3 , V 2 O 5 , or TaO 2-a , where a is 0 (zero) to 2. 
     
     
       8. The method according to  claim 1 , wherein when the first resistance change layer is TaO 2-a , the second resistance change layer is Ta 2 O 5-a , where a is 0 (zero) to 2. 
     
     
       9. The method according to  claim 1 , wherein the forming a second resistance change layer is performed by mixing argon gas with oxygen gas, the partial pressure of which to be 1% to 5%. 
     
     
       10. The method according to  claim 1 , further comprising forming a tunneling barrier layer on the first electrode between the forming a first electrode on a substrate and the forming a first resistance change layer on the first electrode. 
     
     
       11. The method according to  claim 10 , wherein the forming a tunneling barrier layer is performed by chemical vapor deposition, thermal vacuum treatment, sputtering, or electron beam treatment. 
     
     
       12. The method according to  claim 10 , wherein the tunneling barrier layer comprises TiO x , Ti x NO y , HfO x , Hf x O y , AlO x , Al x O y , TaO x , Ta x NO y , VO x , V x O y , Nb x O y , NbO x , Fe x O y , FeO x , W x O y , or WO x , where each of x and y is a real number greater than 0 (zero). 
     
     
       13. The method according to  claim 1 , wherein in the forming an iridium electrode, oxygen ions supplied by the oxygen gas change resistance values of the first resistance change layer and second resistance change layer while migrating therebetween according to a voltage or a current applied thereto. 
     
     
       14. An artificial synapse device manufactured by the method according to  claim 1 . 
     
     
       15. A method of manufacturing an artificial synapse device, comprising:
 forming a first electrode on a substrate; 
 forming a resistance change layer on the first electrode; and 
 forming an iridium (Ir) electrode on the resistance change layer by sputtering in an atmosphere of argon gas and a small amount of oxygen gas, 
 wherein the forming an iridium electrode is performed by mixing argon gas with oxygen gas, the partial pressure of which to be 0.1% to 5%. 
 
     
     
       16. The method according to  claim 15 , wherein the resistance change layer comprises a metal oxide.