Inventor

PARK SOON-OH

KR27 patents

⚠️ This page may combine multiple inventors who share the name “PARK SOON-OH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK SOON-OH

SAMSUNG ELECTRONICS CO LTD

Memory device and method of manufacturing the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

FRAM and method of fabricating the same

High dielectric capacitors

Magnetoresistive random access memory device and method of manufacturing the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-changeable memory device and method of manufacturing the same

Variable resistance memory devices

Memory device including a variable resistance material layer

Variable resistance memory devices

Methods of forming high dielectric capacitors

Memory device and method of manufacturing the same

Semiconductor devices

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Memory device

Memory device and method of manufacturing the same

Magnetoresistive random access memory device

Semiconductor device

Memory device

AHN DONG-HO

Non-volatile memory device including phase-change material

Non-volatile memory device including phase-change material

OH GYU-HWAN

Methods of forming multi-level cell of semiconductor memory

Method of fabricating phase-change memory device having TiC layer

PARK CHAN-JIN

Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices

PARK JEONG-HEE

Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device

HWANG YOUNG-NAM

Multi-bit phase change memory devices