Inventor
MA HONG
US29 patents
⚠️ This page may combine multiple inventors who share the name “MA HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
9 patentsUS8034712B2Oct 11, 2011
Method of fabricating dual damascene structure
UNITED MICROELECTRONICS CORP9 citations84
US7838415B2Nov 23, 2010
Method of fabricating dual damascene structure
UNITED MICROELECTRONICS CORP9 citations84
US7238619B2Jul 3, 2007
Method for eliminating bridging defect in via first dual damascene process
UNITED MICROELECTRONICS CORP15 citations84
US7510965B2Mar 31, 2009
Method for fabricating a dual damascene structure
UNITED MICROELECTRONICS CORP3 citations62
US7482266B2Jan 27, 2009
Method of forming composite opening and method of dual damascene process using the same
UNITED MICROELECTRONICS CORP2 citations62
US7622395B2Nov 24, 2009
Two-step method for etching a fuse window on a semiconductor substrate
UNITED MICROELECTRONICS CORP4 citations59
US8019457B2Sep 13, 2011
Method of controlling result parameter of IC manufacturing procedure
UNITED MICROELECTRONICS CORP1 citations52
US7704870B2Apr 27, 2010
Via-first interconnection process using gap-fill during trench formation
UNITED MICROELECTRONICS CORP1 citations49
US7989804B2Aug 2, 2011
Test pattern structure
UNITED MICROELECTRONICS CORP0 citations44
UNIV WASHINGTON
3 patentsUS7014796B2Mar 21, 2006
Nonlinear optical compounds and methods for their preparation
UNIV WASHINGTON28 citations92
US7601849B1Oct 13, 2009
Nonlinear optical compounds and related macrostructures
UNIV WASHINGTON17 citations84
US7078542B2Jul 18, 2006
Nonlinear optical compounds and methods for their preparation
UNIV WASHINGTON10 citations73
UNIV HUAZHONG SCIENCE TECH
2 patentsUS12442847B2Oct 14, 2025
Method for parameter extraction of sensitive probe and degree-of-freedom coupling calculation of capacitive displacement sensor
UNIV HUAZHONG SCIENCE TECH0 citations52
US12590822B2Mar 31, 2026
Method of amplitude-phase inconsistency in-situ correction for the multi-channel capacitive sensor
UNIV HUAZHONG SCIENCE TECH0 citations45
Intel NDTM US LLC
2 patentsUS12488819B2Dec 2, 2025
Dummy wordline contacts to improve etch margin of semi-isolated wordlines in staircase structures
Intel NDTM US LLC0 citations51
US12432922B2Sep 30, 2025
Method and apparatus to mitigate word line staircase etch stop layer thickness variations in 3D NAND devices
Intel NDTM US LLC0 citations50