Inventor

MOMODOMI MASAKI

JP58 patents

Patents

50 patents

US4959812ASep 25, 1990

Electrically erasable programmable read-only memory with NAND cell structure

TOSHIBA KK652 citations99

US6151249ANov 21, 2000

NAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistors

TOSHIBA KK94 citations98

US4939690AJul 3, 1990

Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation

TOSHIBA KK142 citations98

US4630088ADec 16, 1986

MOS dynamic ram

TOSHIBA KK139 citations98

US5361227ANov 1, 1994

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK103 citations97

US6172911B1Jan 9, 2001

Non-volatile semiconductor memory device with an improved verify voltage generator

TOSHIBA KK54 citations96

US5909399AJun 1, 1999

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK26 citations96

US5831903ANov 3, 1998

Electrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the same

TOSHIBA KK76 citations96

US5793696AAug 11, 1998

Electrically erasable programmable read-only memory with electric field decreasing controller

TOSHIBA KK52 citations96

US5523980AJun 4, 1996

Semiconductor memory device

TOSHIBA KK99 citations96

US5453955ASep 26, 1995

Non-volatile semiconductor memory device

TOSHIBA KK86 citations96

US5293337AMar 8, 1994

Electrically erasable programmable read-only memory with electric field decreasing controller

TOSHIBA KK100 citations96

US5278794AJan 11, 1994

NAND-cell type electrically erasable and programmable read-only memory with redundancy circuit

TOSHIBA KK92 citations96

US5075890ADec 24, 1991

Electrically erasable programmable read-only memory with nand cell

TOSHIBA KK62 citations96

US5043942AAug 27, 1991

Nand cell type programmable read-only memory with common control gate driver circuit

TOSHIBA KK58 citations96

US5050125ASep 17, 1991

Electrically erasable programmable read-only memory with NAND cellstructure

TOSHIBA KK60 citations95

US7139201B2Nov 21, 2006

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK24 citations93

US6967892B2Nov 22, 2005

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK27 citations93

US6781895B1Aug 24, 2004

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK27 citations93

US6081454AJun 27, 2000

Electrically erasable programmable read-only memory with threshold value controller for data programming

TOSHIBA KK23 citations93

US5818791AOct 6, 1998

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK24 citations93

US5657270AAug 12, 1997

Electrically erasable programmable read-only memory with threshold value controller for data programming

TOSHIBA KK36 citations93

US5517457AMay 14, 1996

Semiconductor memory device

TOSHIBA KK37 citations93

US5402373AMar 28, 1995

Electrically erasable programmable read-only memory with electric field decreasing controller

TOSHIBA KK29 citations93

US5280454AJan 18, 1994

Electrically erasable programmable read-only memory with block-erase function

TOSHIBA KK54 citations93

US5253206AOct 12, 1993

Electrically erasable programmable read-only memory with threshold value measurement circuit

TOSHIBA KK44 citations93

US5247480ASep 21, 1993

Electrically erasable progammable read-only memory with nand cell blocks

TOSHIBA KK34 citations93

US5088060AFeb 11, 1992

Electrically erasable programmable read-only memory with NAND memory cell structure

TOSHIBA KK37 citations93

US4996669AFeb 26, 1991

Electrically erasable programmable read-only memory with NAND memory cell structure

TOSHIBA KK47 citations93

US5978265ANov 2, 1999

Non-volatile semiconductor memory device with nand type memory cell arrays

TOSHIBA KK35 citations92

US5740112AApr 14, 1998

Sense amplifier for use in an EEPROM

TOSHIBA KK34 citations92

US5508957AApr 16, 1996

Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through

TOSHIBA KK56 citations92

US5400279AMar 21, 1995

Nonvolatile semiconductor memory device with NAND cell structure

TOSHIBA KK24 citations92

US5379256AJan 3, 1995

Electrically erasable programmable read-only memory with write/verify controller

TOSHIBA KK41 citations92

US5179427AJan 12, 1993

Non-volatile semiconductor memory device with voltage stabilizing electrode

TOSHIBA KK32 citations92

US4799193AJan 17, 1989

Semiconductor memory devices

TOSHIBA KK33 citations92

US7248493B2Jul 24, 2007

Memory system having improved random write performance

TOSHIBA KK15 citations84

US7268424B2Sep 11, 2007

Semiconductor device, electronic card and pad rearrangement substrate

TOSHIBA KK8 citations74

US7095102B2Aug 22, 2006

Pad rearrangement substrate

TOSHIBA KK5 citations74

US5591999AJan 7, 1997

Electrically erasable programmable read only memory device with an improved memory cell pattern layout

TOSHIBA KK9 citations74

US4875195AOct 17, 1989

Semiconductor device with a reference voltage generator

TOSHIBA KK11 citations74

US4630087ADec 16, 1986

Nonvolatile semiconductor memory device

TOSHIBA KK15 citations74

US5440509AAug 8, 1995

Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines

TOSHIBA KK17 citations73

Showing the top 50 of 58 patents by PatentIndex Score.