Inventor
AKIYAMA HAJIME
JP54 patents
⚠️ This page may combine multiple inventors who share the name “AKIYAMA HAJIME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
34 patentsUS6307232B1Oct 23, 2001
Semiconductor device having lateral high breakdown voltage element
MITSUBISHI ELECTRIC CORP115 citations98
US6037634AMar 14, 2000
Semiconductor device with first and second elements formed on first and second portions
MITSUBISHI ELECTRIC CORP70 citations96
US6246101B1Jun 12, 2001
Isolation structure and semiconductor device including the isolation structure
MITSUBISHI ELECTRIC CORP49 citations92
US6163040ADec 19, 2000
Thyristor manufacturing method and thyristor
MITSUBISHI ELECTRIC CORP21 citations92
US5994189ANov 30, 1999
High withstand voltage semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP29 citations92
US5804864ASep 8, 1998
High withstand voltage semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP32 citations92
US5292672AMar 8, 1994
Method of manufacturing an insulated gate bipolar transistor
MITSUBISHI ELECTRIC CORP24 citations92
US5182626AJan 26, 1993
Insulated gate bipolar transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP21 citations92
US5160985ANov 3, 1992
Insulated gate bipolar transistor
MITSUBISHI ELECTRIC CORP38 citations92
US7481885B2Jan 27, 2009
Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device
MITSUBISHI ELECTRIC CORP8 citations84
US7417296B2Aug 26, 2008
Dielectric isolation type semiconductor device
MITSUBISHI ELECTRIC CORP11 citations84
US7408228B2Aug 5, 2008
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
MITSUBISHI ELECTRIC CORP10 citations84
US6603176B2Aug 5, 2003
Power semiconductor device for power integrated circuit device
MITSUBISHI ELECTRIC CORP18 citations84
US6992363B2Jan 31, 2006
Dielectric separation type semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP9 citations74
US7190034B2Mar 13, 2007
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
MITSUBISHI ELECTRIC CORP6 citations73
US7135752B2Nov 14, 2006
Dielectric isolation type semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP10 citations72
US7125780B2Oct 24, 2006
Dielectric isolation type semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP6 citations72
US8975681B2Mar 10, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations63
US7977787B2Jul 12, 2011
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations63
US7851873B2Dec 14, 2010
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP2 citations63
US6049095AApr 11, 2000
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations63
US9257316B2Feb 9, 2016
Semiconductor testing jig and transfer jig for the same
MITSUBISHI ELECTRIC CORP2 citations62
US7777279B2Aug 17, 2010
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
MITSUBISHI ELECTRIC CORP2 citations62
US10228412B2Mar 12, 2019
Semiconductor device and method for testing same
MITSUBISHI ELECTRIC CORP0 citations52
US9335371B2May 10, 2016
Semiconductor evaluating device and semiconductor evaluating method
MITSUBISHI ELECTRIC CORP0 citations52
US9121899B2Sep 1, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US7545005B2Jun 9, 2009
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
MITSUBISHI ELECTRIC CORP0 citations52
US7485943B2Feb 3, 2009
Dielectric isolation type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations52
US10068814B2Sep 4, 2018
Apparatus and method for evaluating semiconductor device comprising thermal image processing
MITSUBISHI ELECTRIC CORP1 citations51
US8980655B2Mar 17, 2015
Test apparatus and test method
MITSUBISHI ELECTRIC CORP1 citations51
US10192797B2Jan 29, 2019
Semiconductor device and electrical contact structure thereof
MITSUBISHI ELECTRIC CORP0 citations42
US9880196B2Jan 30, 2018
Semiconductor device inspection apparatus and semiconductor device inspection method
MITSUBISHI ELECTRIC CORP0 citations42
US9551745B2Jan 24, 2017
Semiconductor device assessment apparatus
MITSUBISHI ELECTRIC CORP0 citations42
US9117880B2Aug 25, 2015
Method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations42
OKADA AKIRA
6 patentsUS9659795B2May 23, 2017
Foreign matter removal device and foreign matter removal method
OKADA AKIRA12 citations83
US9188624B2Nov 17, 2015
Inspection apparatus
OKADA AKIRA3 citations62
US9157931B2Oct 13, 2015
Probe card
OKADA AKIRA3 citations62
US9207257B2Dec 8, 2015
Inspection apparatus
OKADA AKIRA1 citations51
US9117656B2Aug 25, 2015
Semiconductor cleaning device and semiconductor cleaning method
OKADA AKIRA0 citations51
US8981805B2Mar 17, 2015
Inspection apparatus and inspection method
OKADA AKIRA1 citations51
AKIYAMA HAJIME
6 patentsUS9347988B2May 24, 2016
Semiconductor testing jig and semiconductor testing method performed by using the same
AKIYAMA HAJIME9 citations83
US8125045B2Feb 28, 2012
Dielectric isolation type semiconductor device and manufacturing method therefor
AKIYAMA HAJIME2 citations62
US9312160B2Apr 12, 2016
Wafer suction method, wafer suction stage, and wafer suction system
AKIYAMA HAJIME0 citations51
US8823360B2Sep 2, 2014
Semiconductor device
AKIYAMA HAJIME1 citations51
US8110449B2Feb 7, 2012
Semiconductor device and method of manufacturing the same
AKIYAMA HAJIME0 citations51
US8071454B1Dec 6, 2011
Method for manufacturing dielectric isolation type semiconductor device
AKIYAMA HAJIME1 citations51
SANYO CHEMICAL IND LTD
2 patentsSHIMIZU KAZUHIRO
2 patentsShowing the top 50 of 54 patents by PatentIndex Score.