Inventor
OHNISHI TERUHITO
JP32 patents
⚠️ This page may combine multiple inventors who share the name “OHNISHI TERUHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
29 patentsUS6399993B1Jun 4, 2002
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD67 citations96
US5327012AJul 5, 1994
Semiconductor device having a double-layer interconnection structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD60 citations96
US6759697B2Jul 6, 2004
Heterojunction bipolar transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations93
US6674149B2Jan 6, 2004
Bipolar transistor device having phosphorous
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations93
US5500379AMar 19, 1996
Method of manufacturing semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD46 citations92
US5365095ANov 15, 1994
Semiconductor memory device and process
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations91
US6620665B1Sep 16, 2003
Method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7091099B2Aug 15, 2006
Bipolar transistor and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations83
US5449934ASep 12, 1995
Semiconductor memory device and process
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations81
US6867107B2Mar 15, 2005
Variable capacitance device and process for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6861316B2Mar 1, 2005
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6828602B2Dec 7, 2004
Bipolar transistor and method manufacture thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6838395B1Jan 4, 2005
Method for fabricating a semiconductor crystal
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations73
US6214126B1Apr 10, 2001
Method for cleaning a silicon substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US6642607B2Nov 4, 2003
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations72
US7135721B2Nov 14, 2006
Heterojunction bipolar transistor having reduced driving voltage requirements
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US7049681B2May 23, 2006
Bipolar transistor device having phosphorous
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6939772B2Sep 6, 2005
Bipolar transistor and fabrication method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6917075B2Jul 12, 2005
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6847063B2Jan 25, 2005
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US5472826ADec 5, 1995
Semiconductor device fabrication method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6987072B2Jan 17, 2006
Method of producing semiconductor crystal
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US6927118B2Aug 9, 2005
Method of fabricating a bipolar transistor utilizing a dry etching and a wet etching to define a base junction opening
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations62
US6847062B2Jan 25, 2005
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62
US5198884AMar 30, 1993
Semiconductor devices having a double-layer interconnection structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US6800532B2Oct 5, 2004
Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations61
US7109095B2Sep 19, 2006
Method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations60
US7145168B2Dec 5, 2006
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
US7129168B2Oct 31, 2006
Method of estimating substrate temperature
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations42
PANASONIC CORP
3 patentsUS7808358B2Oct 5, 2010
Inductor and method for fabricating the same
PANASONIC CORP24 citations93
US7719031B2May 18, 2010
Heterojunction biploar transistor and method for manufacturing same
PANASONIC CORP9 citations84
US7465969B2Dec 16, 2008
Bipolar transistor and method for fabricating the same
PANASONIC CORP7 citations73