Inventor

ZHONG TOM

US59 patents

⚠️ This page may combine multiple inventors who share the name “ZHONG TOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHONG TOM

TAIWAN SEMICONDUCTOR MFG CO LTD

Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask

MTJ device performance by adding stress modulation layer to MTJ device structure

Multiple hard mask patterning to fabricate 20nm and below MRAM devices

MTJ device performance by controlling device shape

MTJ device performance by controlling device shape

Method for fabricating a magnetic tunneling junction (MTJ) structure

STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance

MTJ device performance by adding stress modulation layer to MTJ device structure

MTJ device performance by controlling device shape

MTJ device performance by adding stress modulation layer to mtj device structure

STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance

Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask

STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance

MAGIC TECHNOLOGIES INC

Method of MRAM fabrication with zero electrical shorting

Composite hard mask for the etching of nanometer size magnetic multilayer based device

Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices

Method of fabricating contact pad for magnetic random access memory

High density spin-transfer torque MRAM process

Method of magnetic tunneling junction pattern layout for magnetic random access memory

Bottom electrode mask design for ultra-thin interlayer dielectric approach in MRAM device fabrication

Method of high density field induced MRAM process

HEADWAY TECH INC

Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the same

MTJ device process/integration method with pre-patterned seed layer

Hybrid metallic hard mask stack for MTJ etching

Method to remove sidewall damage after MTJ etching

Etching and encapsulation scheme for magnetic tunnel junction fabrication

Etching and encapsulation scheme for magnetic tunnel junction fabrication

System for controlling a critical dimension (CD) uniformity of a magnetic head device

ZHONG TOM

Method of magnetic tunneling layer processes for spin-transfer torque MRAM

High density spin-transfer torque MRAM process

High density spin-transfer torque MRAM process

Method to reduce magnetic film stress for better yield

Method to connect a magnetic device to a CMOS transistor

Method of high density memory fabrication

ASML HOLDING NV

Environment exchange control for material on a wafer surface

Environment exchange control for material on a wafer surface

Method of uniformly coating a substrate

Method of uniformly coating a substrate

HEADWAY TECHNOLOGIES INC

MRAM cell structure and method of fabrication

Fabrication method for embedded magnetic memory

Method to reduce magnetic film stress for better yield

SILICON VALLEY GROUP

Method for two dimensional adaptive process control of critical dimensions during spin coating process

Environment exchange control for material on a wafer surface

Environment exchange control for material on a wafer surface

APPLIED SPINTRONICS INC

MRAM cell structure and method of fabrication

BELEN RODOLFO

Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices

ASML HOLDINGS N V

Method for two dimensional adaptive process control of critical dimensions during spin coating process

ZHONG ADAM

Use of CMP to contact a MTJ structure without forming a via

XIAO RONGFU

Bottom electrode for MRAM device

ASML NETHERLANDS BV

Environment exchange control for material on a wafer surface