Inventor
COIGNUS JEAN
FR7 patents
Patents
7 patentsUS9852801B1Dec 26, 2017
Method for determining a leakage current through an inter-gate dielectric structure of a flash memory cell
COMMISSARIAT ENERGIE ATOMIQUE5 citations65
US12363918B2Jul 15, 2025
Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US11656267B2May 23, 2023
Transistor characterization
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11145663B2Oct 12, 2021
Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations45
US10355207B2Jul 16, 2019
Method for forming a non-volatile memory cell, non-volatile memory cell formed according to said method and microelectronic device comprising such memory cells
COMMISSARIAT ENERGIE ATOMIQUE0 citations42
US9627074B2Apr 18, 2017
Method for determining an optimal voltage pulse for programming a flash memory cell
COMMISSARIAT ENERGIE ATOMIQUE0 citations36
US10067185B2Sep 4, 2018
System for the characterisation of a flash memory cell
COMMISSARIAT ENERGIE ATOMIQUE0 citations34