Inventor
MOON TAEHWAN
KR21 patents
Patents
21 patentsUS11145731B2Oct 12, 2021
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US11862705B2Jan 2, 2024
Electronic devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11996150B2May 28, 2024
Non-volatile content addressable memory device having simple cell configuration and operating method of the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US12382644B2Aug 5, 2025
Thin film structure including dielectric material layer and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12283629B2Apr 22, 2025
Ferroelectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12206009B2Jan 21, 2025
Electronic devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12107140B2Oct 1, 2024
Thin film structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12087840B2Sep 10, 2024
Semiconductor device and capacitor including hydrogen-incorporated oxide layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11984514B2May 14, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11848366B2Dec 19, 2023
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11804536B2Oct 31, 2023
Thin film structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11699765B2Jul 11, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11646375B2May 9, 2023
Ferroelectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11456351B2Sep 27, 2022
Thin film structure including dielectric material layer and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12266710B2Apr 1, 2025
Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12218217B2Feb 4, 2025
Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure
SAMSUNG ELECTRONICS CO LTD0 citations61
US12527004B2Jan 13, 2026
Nonvolatile memory device and apparatus comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12527038B2Jan 13, 2026
Electronic device including ferroelectric thin film structure
SAMSUNG ELECTRONICS CO LTD0 citations51
US12205951B2Jan 21, 2025
Complementary metal oxide semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11978798B2May 7, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12453106B2Oct 21, 2025
Capacitor device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations50